Presentation 1996/1/17
1.2V Operation 1.1W Heterojunction FETs
Keiko Yamaguchi, Naotaka Iwata, Masaaki Kuzuhara,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper describes 950MHz power performance for double-doped heterojunction FETs(HJFETs) operated at a low drain bias voltage of 1.2V, which corresponds to the voltage of one NiMH battery. The fabricated 28mm gate HJFET achieved 1.1W saturated output power and 63%maximum power-added efficiency. The load-pull measurement at 1.2V operation indicated that the optimum impedances for maximum output power and maximum PAE were similar to each other. The saturated output power calculation using Fourier series expansion revealed that output power increases with an increase in the load impedance, resulting from a large swing of the drain voltage. As a result, when the operating drain voltage is very small, higher power and higher PAE can be simultaneously achieved with a similar load impedance value.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Heterojunction / Personal Cellular / Power-Added Efficiency / NiMH Battery
Paper # ED95-146,MW95-131,ICD95-202
Date of Issue

Conference Information
Committee ED
Conference Date 1996/1/17(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1.2V Operation 1.1W Heterojunction FETs
Sub Title (in English)
Keyword(1) Heterojunction
Keyword(2) Personal Cellular
Keyword(3) Power-Added Efficiency
Keyword(4) NiMH Battery
1st Author's Name Keiko Yamaguchi
1st Author's Affiliation Kansai Electronics Laboratory. NEC Corporation()
2nd Author's Name Naotaka Iwata
2nd Author's Affiliation Kansai Electronics Laboratory. NEC Corporation
3rd Author's Name Masaaki Kuzuhara
3rd Author's Affiliation Kansai Electronics Laboratory. NEC Corporation
Date 1996/1/17
Paper # ED95-146,MW95-131,ICD95-202
Volume (vol) vol.95
Number (no) 448
Page pp.pp.-
#Pages 6
Date of Issue