Presentation | 1996/1/17 1.2V Operation 1.1W Heterojunction FETs Keiko Yamaguchi, Naotaka Iwata, Masaaki Kuzuhara, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper describes 950MHz power performance for double-doped heterojunction FETs(HJFETs) operated at a low drain bias voltage of 1.2V, which corresponds to the voltage of one NiMH battery. The fabricated 28mm gate HJFET achieved 1.1W saturated output power and 63%maximum power-added efficiency. The load-pull measurement at 1.2V operation indicated that the optimum impedances for maximum output power and maximum PAE were similar to each other. The saturated output power calculation using Fourier series expansion revealed that output power increases with an increase in the load impedance, resulting from a large swing of the drain voltage. As a result, when the operating drain voltage is very small, higher power and higher PAE can be simultaneously achieved with a similar load impedance value. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Heterojunction / Personal Cellular / Power-Added Efficiency / NiMH Battery |
Paper # | ED95-146,MW95-131,ICD95-202 |
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Conference Information | |
Committee | ED |
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Conference Date | 1996/1/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | 1.2V Operation 1.1W Heterojunction FETs |
Sub Title (in English) | |
Keyword(1) | Heterojunction |
Keyword(2) | Personal Cellular |
Keyword(3) | Power-Added Efficiency |
Keyword(4) | NiMH Battery |
1st Author's Name | Keiko Yamaguchi |
1st Author's Affiliation | Kansai Electronics Laboratory. NEC Corporation() |
2nd Author's Name | Naotaka Iwata |
2nd Author's Affiliation | Kansai Electronics Laboratory. NEC Corporation |
3rd Author's Name | Masaaki Kuzuhara |
3rd Author's Affiliation | Kansai Electronics Laboratory. NEC Corporation |
Date | 1996/1/17 |
Paper # | ED95-146,MW95-131,ICD95-202 |
Volume (vol) | vol.95 |
Number (no) | 448 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |