| Presentation | 1995/12/14 Emission Characteristics of Si Emitter with P-N Junction Takayuki Hirano, Seigo Kanemaru, Hisao Tanoue, Junji Itoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The emission characteristics of the gated field emitter arrays (FEAs) with p-n junction have been reported. The gated FEAs with p-n junction were made by ion implantation as well as n-type and p-type FEAs with various impurity concentration. The n and p/n (n-emitter with p-type surface) FEAs had I-V characteristics in agreement with the Fowler-Nordheim theory. The p and n/p tips exhibited a current saturation property. In this saturation region, the stabilization of the emission current and photo-sensitivity were observed. C-V data indicated an inversion layer and a depletion layer under gate electrode. The present saturation mechanism is explained by considering the depletion layer below the emitter tips and gates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | vacuum microelectronics / field emitter / electron emission / ion implantation / silicon emitter / pn junction |
| Paper # | ED95-133 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1995/12/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emission Characteristics of Si Emitter with P-N Junction |
| Sub Title (in English) | |
| Keyword(1) | vacuum microelectronics |
| Keyword(2) | field emitter |
| Keyword(3) | electron emission |
| Keyword(4) | ion implantation |
| Keyword(5) | silicon emitter |
| Keyword(6) | pn junction |
| 1st Author's Name | Takayuki Hirano |
| 1st Author's Affiliation | Kobe Steel, Ltd.() |
| 2nd Author's Name | Seigo Kanemaru |
| 2nd Author's Affiliation | Electrotechnical Laboratory |
| 3rd Author's Name | Hisao Tanoue |
| 3rd Author's Affiliation | Electrotechnical Laboratory |
| 4th Author's Name | Junji Itoh |
| 4th Author's Affiliation | Electrotechnical Laboratory |
| Date | 1995/12/14 |
| Paper # | ED95-133 |
| Volume (vol) | vol.95 |
| Number (no) | 424 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |