Presentation 1995/12/14
Properties of Tower Structure Si Field Emitter Arrays
Keisuke Koga, Yoshikazu Hori, Seigo Kanemaru, Junji Itoh,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Effects of structure parameters of our proposed "tower structure Si FEA's" and their process latitude are studied for realizing FEA's with low voltage operation and uniform field emisssion. High density Si FEA's with sub-micron gate diameter and extremely sharp emitter tips have been uniformly fabricated by using VLSI technologies. In addition to low voltage operation, large current density and stable field emission have been demonstrated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Field emitter array / Low voltage operation / Large current density
Paper # ED95-132
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Committee ED
Conference Date 1995/12/14(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Properties of Tower Structure Si Field Emitter Arrays
Sub Title (in English)
Keyword(1) Field emitter array
Keyword(2) Low voltage operation
Keyword(3) Large current density
1st Author's Name Keisuke Koga
1st Author's Affiliation Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.()
2nd Author's Name Yoshikazu Hori
2nd Author's Affiliation Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
3rd Author's Name Seigo Kanemaru
3rd Author's Affiliation Electrotechnical Laboratory
4th Author's Name Junji Itoh
4th Author's Affiliation Electrotechnical Laboratory
Date 1995/12/14
Paper # ED95-132
Volume (vol) vol.95
Number (no) 424
Page pp.pp.-
#Pages 6
Date of Issue