Presentation | 1995/12/14 Properties of Tower Structure Si Field Emitter Arrays Keisuke Koga, Yoshikazu Hori, Seigo Kanemaru, Junji Itoh, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Effects of structure parameters of our proposed "tower structure Si FEA's" and their process latitude are studied for realizing FEA's with low voltage operation and uniform field emisssion. High density Si FEA's with sub-micron gate diameter and extremely sharp emitter tips have been uniformly fabricated by using VLSI technologies. In addition to low voltage operation, large current density and stable field emission have been demonstrated. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Field emitter array / Low voltage operation / Large current density |
Paper # | ED95-132 |
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Committee | ED |
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Conference Date | 1995/12/14(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Properties of Tower Structure Si Field Emitter Arrays |
Sub Title (in English) | |
Keyword(1) | Field emitter array |
Keyword(2) | Low voltage operation |
Keyword(3) | Large current density |
1st Author's Name | Keisuke Koga |
1st Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.() |
2nd Author's Name | Yoshikazu Hori |
2nd Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
3rd Author's Name | Seigo Kanemaru |
3rd Author's Affiliation | Electrotechnical Laboratory |
4th Author's Name | Junji Itoh |
4th Author's Affiliation | Electrotechnical Laboratory |
Date | 1995/12/14 |
Paper # | ED95-132 |
Volume (vol) | vol.95 |
Number (no) | 424 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |