Presentation | 1995/12/14 Fabrication and Electrical Characteristics of a Multi-layer Structure of Polycrystalline Silicon Field Emitters and Thin Film Transistors G. Hashiguchi, H. Mimura, H. Fujita, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed a new multi-layer structure of polycrystalline field emitter arrays (poly-Si FEAs) and thin film transistors (TFTs), where poly-Si FEAs and TFTs are successively fabricated using a thermally grown SiO_2 mold and transferred to a glass substrate. During operation, the TFT not only controls amount of filed emission but also stabilizes fluctuations of the field emission. Since the TFT does not consume the space for poly-Si FEA fabrication, the structure will be a good candidate for high quality flat panel displays. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | vacuum microelectronics / TFT / polysilicon / field emitter |
Paper # | ED95-131 |
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Committee | ED |
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Conference Date | 1995/12/14(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication and Electrical Characteristics of a Multi-layer Structure of Polycrystalline Silicon Field Emitters and Thin Film Transistors |
Sub Title (in English) | |
Keyword(1) | vacuum microelectronics |
Keyword(2) | TFT |
Keyword(3) | polysilicon |
Keyword(4) | field emitter |
1st Author's Name | G. Hashiguchi |
1st Author's Affiliation | Advanced Technology Research Labs., Nippon Steel Corporation() |
2nd Author's Name | H. Mimura |
2nd Author's Affiliation | ATR Optical and Radio Communications Research Labs. |
3rd Author's Name | H. Fujita |
3rd Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
Date | 1995/12/14 |
Paper # | ED95-131 |
Volume (vol) | vol.95 |
Number (no) | 424 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |