Presentation 1995/12/14
Fabrication and Electrical Characteristics of a Multi-layer Structure of Polycrystalline Silicon Field Emitters and Thin Film Transistors
G. Hashiguchi, H. Mimura, H. Fujita,
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Abstract(in English) We have developed a new multi-layer structure of polycrystalline field emitter arrays (poly-Si FEAs) and thin film transistors (TFTs), where poly-Si FEAs and TFTs are successively fabricated using a thermally grown SiO_2 mold and transferred to a glass substrate. During operation, the TFT not only controls amount of filed emission but also stabilizes fluctuations of the field emission. Since the TFT does not consume the space for poly-Si FEA fabrication, the structure will be a good candidate for high quality flat panel displays.
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Keyword(in English) vacuum microelectronics / TFT / polysilicon / field emitter
Paper # ED95-131
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Committee ED
Conference Date 1995/12/14(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and Electrical Characteristics of a Multi-layer Structure of Polycrystalline Silicon Field Emitters and Thin Film Transistors
Sub Title (in English)
Keyword(1) vacuum microelectronics
Keyword(2) TFT
Keyword(3) polysilicon
Keyword(4) field emitter
1st Author's Name G. Hashiguchi
1st Author's Affiliation Advanced Technology Research Labs., Nippon Steel Corporation()
2nd Author's Name H. Mimura
2nd Author's Affiliation ATR Optical and Radio Communications Research Labs.
3rd Author's Name H. Fujita
3rd Author's Affiliation Institute of Industrial Science, The University of Tokyo
Date 1995/12/14
Paper # ED95-131
Volume (vol) vol.95
Number (no) 424
Page pp.pp.-
#Pages 8
Date of Issue