Presentation 1995/6/23
Design Methodology for Low-Voltage MOSFETs
Takeshi Andoh, Akio Furukawa, Takemitsu Kunio,
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Abstract(in English) We present a design method for low-voltage MOSFETs with low threshold voltage. It is found that an epitaxial channel and forward substrate voltage are effective to reduce the threshold voltage without an increase in short channel effect. The short channel effect, however, is a serious limiting factor for realizing highly integrated ULSIs with sub-0.1μm design rules from a viewpoint of the. threshold voltage fluctuation. In addition, we propose a new operation scheme based on dynamic forward substrate voltage biasing for reducing the stand-by power.
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Keyword(in English) MOSFET / threshold voltage / short channel effect / epitaxial channel / substrate voltage
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Conference Date 1995/6/23(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Design Methodology for Low-Voltage MOSFETs
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) threshold voltage
Keyword(3) short channel effect
Keyword(4) epitaxial channel
Keyword(5) substrate voltage
1st Author's Name Takeshi Andoh
1st Author's Affiliation Microelectronics Research Laboratories NEC Corporation()
2nd Author's Name Akio Furukawa
2nd Author's Affiliation Microelectronics Research Laboratories NEC Corporation
3rd Author's Name Takemitsu Kunio
3rd Author's Affiliation Microelectronics Research Laboratories NEC Corporation
Date 1995/6/23
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Volume (vol) vol.95
Number (no) 117
Page pp.pp.-
#Pages 6
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