Presentation | 1995/6/23 Design Methodology for Low-Voltage MOSFETs Takeshi Andoh, Akio Furukawa, Takemitsu Kunio, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We present a design method for low-voltage MOSFETs with low threshold voltage. It is found that an epitaxial channel and forward substrate voltage are effective to reduce the threshold voltage without an increase in short channel effect. The short channel effect, however, is a serious limiting factor for realizing highly integrated ULSIs with sub-0.1μm design rules from a viewpoint of the. threshold voltage fluctuation. In addition, we propose a new operation scheme based on dynamic forward substrate voltage biasing for reducing the stand-by power. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOSFET / threshold voltage / short channel effect / epitaxial channel / substrate voltage |
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Committee | ED |
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Conference Date | 1995/6/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Design Methodology for Low-Voltage MOSFETs |
Sub Title (in English) | |
Keyword(1) | MOSFET |
Keyword(2) | threshold voltage |
Keyword(3) | short channel effect |
Keyword(4) | epitaxial channel |
Keyword(5) | substrate voltage |
1st Author's Name | Takeshi Andoh |
1st Author's Affiliation | Microelectronics Research Laboratories NEC Corporation() |
2nd Author's Name | Akio Furukawa |
2nd Author's Affiliation | Microelectronics Research Laboratories NEC Corporation |
3rd Author's Name | Takemitsu Kunio |
3rd Author's Affiliation | Microelectronics Research Laboratories NEC Corporation |
Date | 1995/6/23 |
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Volume (vol) | vol.95 |
Number (no) | 117 |
Page | pp.pp.- |
#Pages | 6 |
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