Presentation 1995/5/19
Growth of InP and GaInP alloy on GaP by liquid phase epitaxy
Atsushi Motogaito, Haruhiko Udono, Hironobu Katsuno, Masakazu Kimura, Akira Tanaka, Tokuzo Sukegawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We had succeeded to grow GaAsP layers with a desired composition on GaP substrates by the compositional conversion technique. In order to grow GaInP alloy layers on GaP substrates by this technique, we carried out the growth of InP on GaP first. Fairly good InP layers were obtained, though there was 7.5% lattice-mismatch between InP and GaP. Afterwards, we can convert InP layers into GaInP alloy layers with any compositional range by contacting Ga-In-P solution with InP layer at a constant temperature for a constant time. It was cleared that the compositional conversion was completed in 30 minutes.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) compositionl conversion / InP / GaInP alloy / lattice-mismatch / liquid phase epitaxy / hetero-epitaxy
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Conference Date 1995/5/19(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of InP and GaInP alloy on GaP by liquid phase epitaxy
Sub Title (in English)
Keyword(1) compositionl conversion
Keyword(2) InP
Keyword(3) GaInP alloy
Keyword(4) lattice-mismatch
Keyword(5) liquid phase epitaxy
Keyword(6) hetero-epitaxy
1st Author's Name Atsushi Motogaito
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Haruhiko Udono
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Hironobu Katsuno
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Masakazu Kimura
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
5th Author's Name Akira Tanaka
5th Author's Affiliation Research Institute of Electronics, Shizuoka University
6th Author's Name Tokuzo Sukegawa
6th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 1995/5/19
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Volume (vol) vol.95
Number (no) 38
Page pp.pp.-
#Pages 6
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