Presentation 1995/4/20
Electron wave diffraction and its device application
Kazuhito Furuya,
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Abstract(in English) In the research for the quantum coherent devices, properties of the hot electron in the semiconductor crystal were studied and the ultrafine fabrication techniques were developed for creation of the structure with the size comparable to the electron wavelength. A method for the estimation of the coherent length of the hot electron using the resonant tunneling diode was proposed. The estimated coherent length was 80-120nm in GaInAs. The effective spread of the electron wavefront was defined and estimated as 60nm for Fermi energy of 5meV, the temperature of 4K. Combining the organometalic vapor phase epitaxy, the electron beam exposure technique and the wet chemical etching, 40nm-pitch buried GaInAs/InP grating and 70nm-pitch electrode array were fabricated precisely aligned each other.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Electron wave / Electron wave diffraction / Hot electron / Resonant Tunneling Diode / Coherent length / OMVPE
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Conference Date 1995/4/20(1days)
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Language JPN
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Title (in English) Electron wave diffraction and its device application
Sub Title (in English)
Keyword(1) Electron wave
Keyword(2) Electron wave diffraction
Keyword(3) Hot electron
Keyword(4) Resonant Tunneling Diode
Keyword(5) Coherent length
Keyword(6) OMVPE
1st Author's Name Kazuhito Furuya
1st Author's Affiliation Tokyo Institute of Technology, Department of Electrical and Electronic Engineering()
Date 1995/4/20
Paper #
Volume (vol) vol.95
Number (no) 7
Page pp.pp.-
#Pages 6
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