| Presentation | 1996/5/23 Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by Liquid Phase Epitaxy S. IIDA, T. SAKURAI, H. YANAGIDA, T. KOYAMA, Y. HAYAKAWA, M. KUMAGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InGaAs layers were grown on Patterned GaAs (111)B substrates by liquid phase epitaxy. Two kinds of substrate structurers were fabricated by using a GaAs wafer covered with a SiN_x film. The first type was a substrate which had only regular windows of 1 mmφ in the SiN_x film, and the second had trench of 40μm in depth in the SiN_x windows. InGaAs laterally extended on the SiN_x layer, finally resulted in a hexagonal shape. For trench-type substrates, InGaAs layers grew laterally from the side wall of the trench. InGaAs layers made a bridge over the trench. As a result, the etch pit density was extremely low in both layers inside and outside except the trench periphery. It was shown that the growth of high quality crystals was possible to grow by using a trench-type substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | LPE / Patterned GaAs substrate / InGaAs / ELO / etch pit density |
| Paper # | ED96-18,CPM96-3 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/5/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by Liquid Phase Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | LPE |
| Keyword(2) | Patterned GaAs substrate |
| Keyword(3) | InGaAs |
| Keyword(4) | ELO |
| Keyword(5) | etch pit density |
| 1st Author's Name | S. IIDA |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | T. SAKURAI |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | H. YANAGIDA |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | T. KOYAMA |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Y. HAYAKAWA |
| 5th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | M. KUMAGAWA |
| 6th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 1996/5/23 |
| Paper # | ED96-18,CPM96-3 |
| Volume (vol) | vol.96 |
| Number (no) | 66 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |