Presentation | 1997/1/24 A 1.9-GHz Si-Bipolar Variable Attenuator for PHS Transmitter Shoji Otaka, Hiroshi Tanimoto, Shuji Watanabe, Tadahiko Maeda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 4-dB step 28-dB variable attenuator for a 1.9-GHz PHS transmitter was fabricated using Si-bipolar technology. A conventional IF variable amplifier for a receiver was improved to produce an RF band attenuator as follows. The buffer circuits for the impedance converter were removed in each attenuation switchable stage because load resistors of a few hundred ohms were sufficient for the attenuator. This indicates that the attenuator operates in low power consumption. Moreover, a novel attenuation switchable stage configuration to reduce parasitic capacitance limiting the maximum attenuation level was introduced. A maximum attenuation of over 28dB, an attenuation accuracy within 1.2dB, and a vector modulation error of less than 4% were obtained by measurement. The attenuator consumes 21mA with 2.7V supply voltage and occupies an area measuring 1.1mm×0.5mm. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Variable attenuator / Vector modulation error / Bipolar transistor / Transmitter / PHS |
Paper # | ED96-198,MW96-161,IDC96-186 |
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Conference Information | |
Committee | ED |
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Conference Date | 1997/1/24(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A 1.9-GHz Si-Bipolar Variable Attenuator for PHS Transmitter |
Sub Title (in English) | |
Keyword(1) | Variable attenuator |
Keyword(2) | Vector modulation error |
Keyword(3) | Bipolar transistor |
Keyword(4) | Transmitter |
Keyword(5) | PHS |
1st Author's Name | Shoji Otaka |
1st Author's Affiliation | R&D Center, Toshiba Corp.() |
2nd Author's Name | Hiroshi Tanimoto |
2nd Author's Affiliation | R&D Center, Toshiba Corp. |
3rd Author's Name | Shuji Watanabe |
3rd Author's Affiliation | LSI Division, I, Semiconductor Group, Toshiba Corp. |
4th Author's Name | Tadahiko Maeda |
4th Author's Affiliation | R&D Center, Toshiba Corp. |
Date | 1997/1/24 |
Paper # | ED96-198,MW96-161,IDC96-186 |
Volume (vol) | vol.96 |
Number (no) | 462 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |