Presentation 1996/12/13
Subband Properties of GaAs/AlAs Superlatives and their Application to field emitters
H. Mimura, DM. Hosoda, N. Ohtani, J. Ikeda, Y. Neo, H. Shimawaki, K. Yokoo,
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Abstract(in English) We have studied for the purpose of realizing the resonant tunneling field emitters with extremely small electron energy distribution. We have developed the subband visualization method which enables us to observe the subband behavior visual and measured the subband properties of GaAs/AlAs superlattices. We also discuss the possibility of planer-type resonant tunneling field emitters based on GaAs/AlAs based on GsAs/AlAs quantum structures.
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Keyword(in English) GaAs/AlAs / superlattice / resonant tunneling / fleld emitter
Paper # ED96-144
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Committee ED
Conference Date 1996/12/13(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Subband Properties of GaAs/AlAs Superlatives and their Application to field emitters
Sub Title (in English)
Keyword(1) GaAs/AlAs
Keyword(2) superlattice
Keyword(3) resonant tunneling
Keyword(4) fleld emitter
1st Author's Name H. Mimura
1st Author's Affiliation Research Institute of Electrical Communication, Tohoku University()
2nd Author's Name DM. Hosoda
2nd Author's Affiliation ATR Optical and Radio Communications Research Labs.
3rd Author's Name N. Ohtani
3rd Author's Affiliation ATR Adaptive Communications Research Labs.
4th Author's Name J. Ikeda
4th Author's Affiliation R&D Headquarters, Nikon Corp.
5th Author's Name Y. Neo
5th Author's Affiliation Research Institute of Electrical Communication, Tohoku University
6th Author's Name H. Shimawaki
6th Author's Affiliation Research Institute of Electrical Communication, Tohoku University
7th Author's Name K. Yokoo
7th Author's Affiliation Research Institute of Electrical Communication, Tohoku University
Date 1996/12/13
Paper # ED96-144
Volume (vol) vol.96
Number (no) 412
Page pp.pp.-
#Pages 8
Date of Issue