Presentation 1996/12/13
Electron emission emitter using negative electron affinity of p-ZnSe
T. Arakawa, T. Aoki, Y. Nakanisi, Y. Hatanaka,
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Abstract(in English) To obtain a stable electron emission source as a cold cathode, NEA(Negative Electron Affinity) semiconductor emitters are studied Si(100) surface are studied for NEA cold cathod. For the surface cleaning, heading Si(100) up to 1100℃ was required. Caesiation and oxygenation leaded to the status of NEA. To obtain a NEA ZnSe cathode. P+-ZnSe formations were studied by the method of Alkalline dopant diffusion from evaporated K_2S or Na_2Se. Carrier concentration of 9×10^<17>/cm^3 have been obtained in p-type ZnSe.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cold electron emitter / NEA / ZnSe
Paper # ED96-143
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Committee ED
Conference Date 1996/12/13(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Electron emission emitter using negative electron affinity of p-ZnSe
Sub Title (in English)
Keyword(1) Cold electron emitter
Keyword(2) NEA
Keyword(3) ZnSe
1st Author's Name T. Arakawa
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name T. Aoki
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Y. Nakanisi
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Y. Hatanaka
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 1996/12/13
Paper # ED96-143
Volume (vol) vol.96
Number (no) 412
Page pp.pp.-
#Pages 6
Date of Issue