Presentation | 1996/12/13 Electron emission emitter using negative electron affinity of p-ZnSe T. Arakawa, T. Aoki, Y. Nakanisi, Y. Hatanaka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | To obtain a stable electron emission source as a cold cathode, NEA(Negative Electron Affinity) semiconductor emitters are studied Si(100) surface are studied for NEA cold cathod. For the surface cleaning, heading Si(100) up to 1100℃ was required. Caesiation and oxygenation leaded to the status of NEA. To obtain a NEA ZnSe cathode. P+-ZnSe formations were studied by the method of Alkalline dopant diffusion from evaporated K_2S or Na_2Se. Carrier concentration of 9×10^<17>/cm^3 have been obtained in p-type ZnSe. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Cold electron emitter / NEA / ZnSe |
Paper # | ED96-143 |
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Conference Information | |
Committee | ED |
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Conference Date | 1996/12/13(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electron emission emitter using negative electron affinity of p-ZnSe |
Sub Title (in English) | |
Keyword(1) | Cold electron emitter |
Keyword(2) | NEA |
Keyword(3) | ZnSe |
1st Author's Name | T. Arakawa |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
2nd Author's Name | T. Aoki |
2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
3rd Author's Name | Y. Nakanisi |
3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
4th Author's Name | Y. Hatanaka |
4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
Date | 1996/12/13 |
Paper # | ED96-143 |
Volume (vol) | vol.96 |
Number (no) | 412 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |