Presentation 1996/12/13
Emission Characteristics of Si-MOS Electron Tunneling Cathode
Y. Abe, J. Ikeda, K. Tahara, K. Sagae, H. Mimura, K. Yokoo,
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Abstract(in English) The paper describes the emission characteristics of Si-MOS electron tunneling cathodes with various oxide thickness and discusses the energy distribution of the emitted electrons. The experimental results suggests that electrons tunnel through the oxide barrier from the valence band of Si-substrates, as well as from the conduction band. In addition, we have fabricated the cesiated Si-MOS cathodes and measured the energy distribution of the emitted electrons in order to investigate the conduction mechanism of tunneling electrons with lower energy.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NIOS diode / tunneling cathode / energy distribution / work function / Cesiation
Paper # ED96-142
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Committee ED
Conference Date 1996/12/13(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Emission Characteristics of Si-MOS Electron Tunneling Cathode
Sub Title (in English)
Keyword(1) NIOS diode
Keyword(2) tunneling cathode
Keyword(3) energy distribution
Keyword(4) work function
Keyword(5) Cesiation
1st Author's Name Y. Abe
1st Author's Affiliation Research Institute of Electrical Communication, Tohoku Univ.()
2nd Author's Name J. Ikeda
2nd Author's Affiliation R&D Headquarters, NIKON Corp.
3rd Author's Name K. Tahara
3rd Author's Affiliation Research Institute of Electrical communication, Tohoku Univ.
4th Author's Name K. Sagae
4th Author's Affiliation Research Institute of Electrical communication, Tohoku Univ.
5th Author's Name H. Mimura
5th Author's Affiliation Research Institute of Electrical communication, Tohoku Univ.
6th Author's Name K. Yokoo
6th Author's Affiliation Research Institute of Electrical communication, Tohoku Univ.
Date 1996/12/13
Paper # ED96-142
Volume (vol) vol.96
Number (no) 412
Page pp.pp.-
#Pages 8
Date of Issue