Presentation 1996/12/13
Suface-Emitting Cold Cathode Based on Porous Silicon : Fundamental Characteristics and Emission Mechanism
Xia Sheng, Hideki Koyama, Nobuyoshi Koshida, Takamasa Yoshikawa, Kiyohide Ogasawara,
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Abstract(in English) Previously-reported cold electron-emissive properties of porous silicon (PS) light-emitting diodes have been investigated to make clear both the electroluminescence (EL) mechanism and the applicability to vacuum microelectronic devices. The fundamental emission characteristics are described here in terms of the dependencies on the applied voltage, the PS thickness, and the condition of rapid thermal oxidation (RTO). The interrelation between the EL and the cold emission mechanism is discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Porous Silicon / Cold Emitter / Electroluminescence / Tunneling Emission
Paper # ED96-141
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Committee ED
Conference Date 1996/12/13(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Suface-Emitting Cold Cathode Based on Porous Silicon : Fundamental Characteristics and Emission Mechanism
Sub Title (in English)
Keyword(1) Porous Silicon
Keyword(2) Cold Emitter
Keyword(3) Electroluminescence
Keyword(4) Tunneling Emission
1st Author's Name Xia Sheng
1st Author's Affiliation Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology()
2nd Author's Name Hideki Koyama
2nd Author's Affiliation Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology
3rd Author's Name Nobuyoshi Koshida
3rd Author's Affiliation Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology
4th Author's Name Takamasa Yoshikawa
4th Author's Affiliation Corporate Research and Development Laboratory, Pioneer Electronic Co. Ltd.
5th Author's Name Kiyohide Ogasawara
5th Author's Affiliation Corporate Research and Development Laboratory, Pioneer Electronic Co. Ltd.
Date 1996/12/13
Paper # ED96-141
Volume (vol) vol.96
Number (no) 412
Page pp.pp.-
#Pages 6
Date of Issue