| Presentation | 1996/12/13 Fabrication of Si field emitter by anodization Katsuya Higa, Kiyoaki Nishii, Tanemasa Asano, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated new fabrication process of field emitter array by Si anodization. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The field emitter structures can be formed beneath the unanodized n-type Si island. The porous region can be used as a sacrificial region. The shape of emitter structure can be controlled by the dimension of unanodized Si region and the varying the resistivity of p-type region. It has been found that, by utilizing these characteristics, various field emitter structures can be formed from single-crystal Si. Fabrication of field emitter array and the measurement of emission currents are demonstrated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | anodization / porous Si / field emitter |
| Paper # | ED96-139 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/12/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Si field emitter by anodization |
| Sub Title (in English) | |
| Keyword(1) | anodization |
| Keyword(2) | porous Si |
| Keyword(3) | field emitter |
| 1st Author's Name | Katsuya Higa |
| 1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
| 2nd Author's Name | Kiyoaki Nishii |
| 2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| 3rd Author's Name | Tanemasa Asano |
| 3rd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| Date | 1996/12/13 |
| Paper # | ED96-139 |
| Volume (vol) | vol.96 |
| Number (no) | 412 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |