Presentation 1996/12/13
Development of beam current stabilization double-gated electron guns
Yoshitaka kagawa, Seigo Kanemaru, Junji Itoh,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A new double-gated electron gun with an n-p junction with in each Si emitter was developed for beam current stabilization. Two 0.2um-thick Nb gates, upper and lower were laminated to a Si substrate and had operating surrounding the tips with 2.5um and 1.7um is diameter respectively. The lower gate was used as an extraction gate and the upper on was based as a lens to focus the electrons emitter from the tip.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) field emitter / double-gated electron gun / electron emission / silicon emitter / pn junction
Paper # ED96-138
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Conference Information
Committee ED
Conference Date 1996/12/13(1days)
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Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of beam current stabilization double-gated electron guns
Sub Title (in English)
Keyword(1) field emitter
Keyword(2) double-gated electron gun
Keyword(3) electron emission
Keyword(4) silicon emitter
Keyword(5) pn junction
1st Author's Name Yoshitaka kagawa
1st Author's Affiliation Fmaba Co., Ltd.()
2nd Author's Name Seigo Kanemaru
2nd Author's Affiliation Electrotechnical Laboratory
3rd Author's Name Junji Itoh
3rd Author's Affiliation Electrotechnical Laboratory
Date 1996/12/13
Paper # ED96-138
Volume (vol) vol.96
Number (no) 412
Page pp.pp.-
#Pages 6
Date of Issue