Presentation | 1996/12/13 Development of beam current stabilization double-gated electron guns Yoshitaka kagawa, Seigo Kanemaru, Junji Itoh, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A new double-gated electron gun with an n-p junction with in each Si emitter was developed for beam current stabilization. Two 0.2um-thick Nb gates, upper and lower were laminated to a Si substrate and had operating surrounding the tips with 2.5um and 1.7um is diameter respectively. The lower gate was used as an extraction gate and the upper on was based as a lens to focus the electrons emitter from the tip. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | field emitter / double-gated electron gun / electron emission / silicon emitter / pn junction |
Paper # | ED96-138 |
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Conference Information | |
Committee | ED |
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Conference Date | 1996/12/13(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Development of beam current stabilization double-gated electron guns |
Sub Title (in English) | |
Keyword(1) | field emitter |
Keyword(2) | double-gated electron gun |
Keyword(3) | electron emission |
Keyword(4) | silicon emitter |
Keyword(5) | pn junction |
1st Author's Name | Yoshitaka kagawa |
1st Author's Affiliation | Fmaba Co., Ltd.() |
2nd Author's Name | Seigo Kanemaru |
2nd Author's Affiliation | Electrotechnical Laboratory |
3rd Author's Name | Junji Itoh |
3rd Author's Affiliation | Electrotechnical Laboratory |
Date | 1996/12/13 |
Paper # | ED96-138 |
Volume (vol) | vol.96 |
Number (no) | 412 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |