| Presentation | 1996/12/13 Emission Characteristics of the Au evaporated Si Emitter T. Ide, Y. Inoue, M. Urayama, Y. Takegawa, Y. Maruo, T. Tokumaru, J. Sawahata, K. Uda, S. Yano, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report on the characteristics of Au evaporated Si field emitter. Our field emitter have a structure having a thermally oxidized SiO_2 film as an insulator layer which separates the gate electrodes from the silicon cathode substrate. Au evaporated Si field emitter was fabricated to obtain the stable current at the emitter by preventing from chemical gas absorption. An anode current of 34μA at 140V has been obtained in the Au evaporated Si field emitter. It is plausible that Si was diffused out from Au surface, according to the result of the nein emission characteristics and the observation of light emitting pattern. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | vacuum microelectronics / silicon field emitter / Au evaporated emitter |
| Paper # | ED96-137 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/12/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emission Characteristics of the Au evaporated Si Emitter |
| Sub Title (in English) | |
| Keyword(1) | vacuum microelectronics |
| Keyword(2) | silicon field emitter |
| Keyword(3) | Au evaporated emitter |
| 1st Author's Name | T. Ide |
| 1st Author's Affiliation | Sharp Corp. Functional Devices Labs.() |
| 2nd Author's Name | Y. Inoue |
| 2nd Author's Affiliation | Sharp Corp. Functional Devices Labs. |
| 3rd Author's Name | M. Urayama |
| 3rd Author's Affiliation | Sharp Corp. Functional Devices Labs. |
| 4th Author's Name | Y. Takegawa |
| 4th Author's Affiliation | Sharp Corp. Functional Devices Labs. |
| 5th Author's Name | Y. Maruo |
| 5th Author's Affiliation | Sharp Corp. Functional Devices Labs. |
| 6th Author's Name | T. Tokumaru |
| 6th Author's Affiliation | Sharp Corp. Functional Devices Labs. |
| 7th Author's Name | J. Sawahata |
| 7th Author's Affiliation | Sharp Corp. Functional Devices Labs. |
| 8th Author's Name | K. Uda |
| 8th Author's Affiliation | Sharp Corp. Functional Devices Labs. |
| 9th Author's Name | S. Yano |
| 9th Author's Affiliation | Sharp Corp. Functional Devices Labs. |
| Date | 1996/12/13 |
| Paper # | ED96-137 |
| Volume (vol) | vol.96 |
| Number (no) | 412 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |