| Presentation | 1996/11/9 Correlation between Stoichiometry and Gate Breakdown in GaAs MESFET'd Yosuke Miyoshi, Michihisa Kohno, Yasunobu Nashimoto, Masashi Mizuta, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The relationship between gate breakdown and surface stoichiometry in GaAs MESFET's passivated with SiO_2 film was investigated utilizing energy dispersive X-ray spectroscopy (EDX). The gate breakdown is suppressed when the As/Ga ratio at about 1nm below the SiO_2/GaAs interface is more than unity. The FETs with low gate breakdown voltage show no correlation between the gate-drain spacing and the gate breakdown voltage. It suggests that, in these FET's, the electric field at the gate edge is elevated due to decrease of the negative surface (passivation interface) charge. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / FET / Gate Breakdown / Passivation / Oxidation / Stoichiometry |
| Paper # | ED96-125 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/11/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Correlation between Stoichiometry and Gate Breakdown in GaAs MESFET'd |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | FET |
| Keyword(3) | Gate Breakdown |
| Keyword(4) | Passivation |
| Keyword(5) | Oxidation |
| Keyword(6) | Stoichiometry |
| 1st Author's Name | Yosuke Miyoshi |
| 1st Author's Affiliation | NEC ULSI Device Development Laboratories() |
| 2nd Author's Name | Michihisa Kohno |
| 2nd Author's Affiliation | NEC ULSI Device Development Laboratories |
| 3rd Author's Name | Yasunobu Nashimoto |
| 3rd Author's Affiliation | NEC ULSI Device Development Laboratories |
| 4th Author's Name | Masashi Mizuta |
| 4th Author's Affiliation | NEC ULSI Device Development Laboratories |
| Date | 1996/11/9 |
| Paper # | ED96-125 |
| Volume (vol) | vol.96 |
| Number (no) | 353 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |