Presentation	1996/10/11 Crystal Growth of GaAsP/Si(100) by Metal-Organic Molecular Beam Epitaxy Y. Watanabe, T. Yasui, M. Yoshimoto, H. Matsunami,
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Abstract(in English)	Single crystalline GaAs_<1-x>P_x(0.3P_x growth(0～1×10^<18>cm^<-3> based on the results of Hall effect measurement. The activation energy of Sn was estimated to be 62.7meV from the temperature dependence of the carrier concentration. The temperature dependence of the carrier concentration for the doped layer was analyzed by taking account of electrons transferred from L-band(Γ-valley) to U-band(X-valley) in the conduction band.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	GaAsP / MOMBE / two-step growth / hetero epitaxial growth on Si / photoluminescence / doping
Paper #	ED96-99,CPM96-77
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Conference Information
Committee	ED
Conference Date	1996/10/11(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Crystal Growth of GaAsP/Si(100) by Metal-Organic Molecular Beam Epitaxy
Sub Title (in English)
Keyword(1)	GaAsP
Keyword(2)	MOMBE
Keyword(3)	two-step growth
Keyword(4)	hetero epitaxial growth on Si
Keyword(5)	photoluminescence
Keyword(6)	doping
1st Author's Name	Y. Watanabe
1st Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name	T. Yasui
2nd Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name	M. Yoshimoto
3rd Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
4th Author's Name	H. Matsunami
4th Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
Date	1996/10/11
Paper #	ED96-99,CPM96-77
Volume (vol)	vol.96
Number (no)	292
Page	pp.pp.-
#Pages	8
Date of Issue