Presentation	1997/3/14 Toward Room Temperature Operation of Single Electron Devices Toshikazu Shimada,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	Reality of single electron devices in the microelectronics becomes being widely recognized. The research in this field is now accelerated by increasing researchers toward reliable operation at room temperature. The integrated single electron memory is successfully fabricated by using randomly distributed nano structures of 2-3nm in size. Conventional lithographic method is not adequate for this purpose. Various methods are used for fabrication of the devices. However, many issues should be solved can be pointed out to accomplish the fabrication of the devices and integration of the devices. Approach to room operation of the devices will be discussed.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Single electron devices / Room temperature operation / Nano-structures
Paper #	ED96-223
Date of Issue

Conference Information
Committee	ED
Conference Date	1997/3/14(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Toward Room Temperature Operation of Single Electron Devices
Sub Title (in English)
Keyword(1)	Single electron devices
Keyword(2)	Room temperature operation
Keyword(3)	Nano-structures
1st Author's Name	Toshikazu Shimada
1st Author's Affiliation	()
Date	1997/3/14
Paper #	ED96-223
Volume (vol)	vol.96
Number (no)	573
Page	pp.pp.-
#Pages	6
Date of Issue