| Presentation | 1997/3/14 Self-organiiing formation of silicon quantum dots and their physical properties at room temperature Seiichi MIYAZAKI, Masatoshi FUKUDA, Kazutoshi SHIBA, Kazuyuki NAKAGAWA, Masataka HIROSE, Atsushi KOHNO, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Nanometer-size silicon dots were spontaneously formed on thermally-grown SiO_2/c-Si by low-pressure chemical vapor deposition (LPCVD) of pure silane (SiH_4) in the temperature range from 525 to 650℃. The size distribution and the area density of Si dots were evaluated by using atomic fore microscopy (AFM) and transmission electron microscopy (TEM). The Si-dot diameter and dot height on as-grown SiO_2 are rate-limited by the thermal decomposition of SiH_4 and the cohesive action of adsorbed precursors on Si nucleation sites, respectively. It has been also found that in the Si dot formation on OH-terminated SiO_2 surface the nucleation density is dramatically enhanced and consequently the dot size and its distribution become small. The tunneling current through SiO_2/Si-dot/SiO_2 double barrier structures was measured by using a conducting AFM probe. As a result, negative conductance characteristics are clearly seen at room temperature, indicating that the resonant tunneling occurs through a single Si quantum dot. It is also demonstrated that Si quantum dots covered with SiO_2 exhibit efficient visible photoluminescence at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si quantum dots / Self-organizing formation / LPCVD / Resonant tunneling / Visible photoluminescence |
| Paper # | ED96-221 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1997/3/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Self-organiiing formation of silicon quantum dots and their physical properties at room temperature |
| Sub Title (in English) | |
| Keyword(1) | Si quantum dots |
| Keyword(2) | Self-organizing formation |
| Keyword(3) | LPCVD |
| Keyword(4) | Resonant tunneling |
| Keyword(5) | Visible photoluminescence |
| 1st Author's Name | Seiichi MIYAZAKI |
| 1st Author's Affiliation | Department of Electrical Engineering, Hiroshima University() |
| 2nd Author's Name | Masatoshi FUKUDA |
| 2nd Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 3rd Author's Name | Kazutoshi SHIBA |
| 3rd Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 4th Author's Name | Kazuyuki NAKAGAWA |
| 4th Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 5th Author's Name | Masataka HIROSE |
| 5th Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 6th Author's Name | Atsushi KOHNO |
| 6th Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| Date | 1997/3/14 |
| Paper # | ED96-221 |
| Volume (vol) | vol.96 |
| Number (no) | 573 |
| Page | pp.pp.- |
| #Pages | 10 |
| Date of Issue | |