| Presentation | 1997/3/14 Aluminum Single-Electron Devices J. S. Tsai, Y. Nakamura, C. D. Chen, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Aluminum single-electron device shows an ideal gate modulation characteristic, a rather high current density, a reasonable reproducibility, and its operation is often completely analytical. We have fabricated Al single electron devices having 20 nm islands with an electron-beam lithography. They showed perfect gate modulations and functioned as electrometer up to temperature above 100K. We have also developed an electrochemical micro-fabrication process (ACME process) which could be routinely used to enhance the operation temperature of the Al devices up to 10 times. A room temperature operable device based on these fabrication methods, a single-electron flash memory, was proposed and its operation simulated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single-electron device / aluminum tunnel junction / micro-fabrication / charging energy / electron-beam lithography / flash memory |
| Paper # | ED96-220 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1997/3/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Aluminum Single-Electron Devices |
| Sub Title (in English) | |
| Keyword(1) | single-electron device |
| Keyword(2) | aluminum tunnel junction |
| Keyword(3) | micro-fabrication |
| Keyword(4) | charging energy |
| Keyword(5) | electron-beam lithography |
| Keyword(6) | flash memory |
| 1st Author's Name | J. S. Tsai |
| 1st Author's Affiliation | NEC Fundamental Research Laboratories() |
| 2nd Author's Name | Y. Nakamura |
| 2nd Author's Affiliation | NEC Fundamental Research Laboratories |
| 3rd Author's Name | C. D. Chen |
| 3rd Author's Affiliation | NEC Fundamental Research Laboratories |
| Date | 1997/3/14 |
| Paper # | ED96-220 |
| Volume (vol) | vol.96 |
| Number (no) | 573 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |