Presentation 1997/3/14
Coulomb Blockade in Semiconductor Quantum Dots
Yoshimasa Isawa, Tsuyoshi Hatano, Susumu Adachi,
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Abstract(in English) After describing a qualitative wxolanation of Coulonb Blockade, the simple consideration of the fluctuations of the number of electrons and the tunneling processes indouble barrier structures, the following Coulomb blockade phenomena in semiconductor quantum dots sre discussed based on theory: Coulomb oscillations, the nonlinear current-voltage characteristics, the quantum dot turnstile, PTA (Photon Assistsd Tunneling), effcts of potential fluctuations and the ruantum cell automaton (QCA). Through these investigations, we wish to understand deeply the physics of nonlinear-dynamical phenomena and the ones relevent to fluctuations in very small devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quantum dots / Coulomb blockade / potential fluctuations / quantum dot turnstile / PAT / QCA
Paper # ED96-219
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Committee ED
Conference Date 1997/3/14(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Coulomb Blockade in Semiconductor Quantum Dots
Sub Title (in English)
Keyword(1) quantum dots
Keyword(2) Coulomb blockade
Keyword(3) potential fluctuations
Keyword(4) quantum dot turnstile
Keyword(5) PAT
Keyword(6) QCA
1st Author's Name Yoshimasa Isawa
1st Author's Affiliation Faculty of Engineering, Hiroshima University()
2nd Author's Name Tsuyoshi Hatano
2nd Author's Affiliation Faculty of Engineering, Hiroshima University
3rd Author's Name Susumu Adachi
3rd Author's Affiliation Faculty of Engineering, Hiroshima University
Date 1997/3/14
Paper # ED96-219
Volume (vol) vol.96
Number (no) 573
Page pp.pp.-
#Pages 8
Date of Issue