| Presentation | 1997/12/12 Low temperature growth of transition metal nitride thin films as a candidate for the emitter material of vacuum microelectronics devices Y. GOTOH, M. NAGAO, H. TSUJI, J. ISHIKAWA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Transition metal nitrides are one of the candidates for the emitter material of vacuum microelectronics devices, due to their inertness, high melting point, and electrical conductivity. One of the difficulties to use these materials as an emitter materiel is that these materials should be synthesized at the temperature as high as 1000℃. In order to lower the temperature of synthesis, ion beam processing is expected. In the present paper, synthesis of zirconium nitride and niobium nitride are described. As a result, crystalline nitride films were obtained at the substrate temperature of 500℃, and formation of bonding between metal atom and nitrogen was achieved at 300℃, which has been clarified b}r x-ray photoelectron spectroscopy. The present paper describes the properties of nitride films such as atomic composition, crystallinity, resistivity, work function, and also the property of electron emission. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | micro-field emitter / vacuum microelectronics / transition metal nitride thin film / ion beam assisted deposition / low temperature growth |
| Paper # | ED97-180 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1997/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low temperature growth of transition metal nitride thin films as a candidate for the emitter material of vacuum microelectronics devices |
| Sub Title (in English) | |
| Keyword(1) | micro-field emitter |
| Keyword(2) | vacuum microelectronics |
| Keyword(3) | transition metal nitride thin film |
| Keyword(4) | ion beam assisted deposition |
| Keyword(5) | low temperature growth |
| 1st Author's Name | Y. GOTOH |
| 1st Author's Affiliation | Department of Electronic Science and Engineering Graduate School of Engineering, Kyoto University() |
| 2nd Author's Name | M. NAGAO |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering Gradate School of Engineering, Kyoto University |
| 3rd Author's Name | H. TSUJI |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering Graduate School of Engineering, Kyoto University |
| 4th Author's Name | J. ISHIKAWA |
| 4th Author's Affiliation | Department of Electronic Science and Engineering Graduate School of Engineering, Kyoto University |
| Date | 1997/12/12 |
| Paper # | ED97-180 |
| Volume (vol) | vol.97 |
| Number (no) | 438 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |