Presentation 1997/12/12
Low Voltage Cathodoluminescent Properties of Phosphors with Conducting Treatment by the Sol-gel Method
Y. Nakanishi, Y. Kominami, K. Horikawa, T. Aoki, T. Nakamura, N. Azuma, Y. Hatanaka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) It has been tried to make the ZnS:Ag, Cl phosphors used in usual CRT conductive, i.e. the formation of In_2O_3 conductive layer using indium-propoxide by the sol-gel method. It was found that the low voltage cathodoluminescent properties depended on the propoxide ratio. The phosphor coated with 3.7wt% showed the highest luminance at low voltage excitation. The resistivity decreased according to increasing of the ratio. The reduction of resistivity improved the suppression of charging up on the phosphor surface and the morphology was changed with the coating condition. It indicates that the sol-gel coating layer is protected the phosphor surface by the electron beam irradiation. It is quite effective for low voltage cathodoluminescent properties of phosphors not only ZnS:Ag, Cl phosphor but also other CRT phosphors.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Low voltage CL / CRT phosphors / Sol-gel method / In[OCH(CH_3)_2]_3 / In_2O_3 / Optimum condition
Paper # ED97-178
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Committee ED
Conference Date 1997/12/12(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Voltage Cathodoluminescent Properties of Phosphors with Conducting Treatment by the Sol-gel Method
Sub Title (in English)
Keyword(1) Low voltage CL
Keyword(2) CRT phosphors
Keyword(3) Sol-gel method
Keyword(4) In[OCH(CH_3)_2]_3
Keyword(5) In_2O_3
Keyword(6) Optimum condition
1st Author's Name Y. Nakanishi
1st Author's Affiliation Research Institute of Electronics, Shizuoka University:Graduate School of Electronic Science and Technology, Shizuoka University()
2nd Author's Name Y. Kominami
2nd Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University
3rd Author's Name K. Horikawa
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name T. Aoki
4th Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University
5th Author's Name T. Nakamura
5th Author's Affiliation Faculty of Engineering, Shizuoka University
6th Author's Name N. Azuma
6th Author's Affiliation Center for Joint Research, Shizuoka University
7th Author's Name Y. Hatanaka
7th Author's Affiliation Research Institute of Electronics, Shizuoka University:Graduate School of Electronic Science and Technology, Shizuoka University
Date 1997/12/12
Paper # ED97-178
Volume (vol) vol.97
Number (no) 438
Page pp.pp.-
#Pages 8
Date of Issue