Presentation | 1997/12/12 Low Voltage Cathodoluminescent Properties of Phosphors with Conducting Treatment by the Sol-gel Method Y. Nakanishi, Y. Kominami, K. Horikawa, T. Aoki, T. Nakamura, N. Azuma, Y. Hatanaka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | It has been tried to make the ZnS:Ag, Cl phosphors used in usual CRT conductive, i.e. the formation of In_2O_3 conductive layer using indium-propoxide by the sol-gel method. It was found that the low voltage cathodoluminescent properties depended on the propoxide ratio. The phosphor coated with 3.7wt% showed the highest luminance at low voltage excitation. The resistivity decreased according to increasing of the ratio. The reduction of resistivity improved the suppression of charging up on the phosphor surface and the morphology was changed with the coating condition. It indicates that the sol-gel coating layer is protected the phosphor surface by the electron beam irradiation. It is quite effective for low voltage cathodoluminescent properties of phosphors not only ZnS:Ag, Cl phosphor but also other CRT phosphors. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Low voltage CL / CRT phosphors / Sol-gel method / In[OCH(CH_3)_2]_3 / In_2O_3 / Optimum condition |
Paper # | ED97-178 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 1997/12/12(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low Voltage Cathodoluminescent Properties of Phosphors with Conducting Treatment by the Sol-gel Method |
Sub Title (in English) | |
Keyword(1) | Low voltage CL |
Keyword(2) | CRT phosphors |
Keyword(3) | Sol-gel method |
Keyword(4) | In[OCH(CH_3)_2]_3 |
Keyword(5) | In_2O_3 |
Keyword(6) | Optimum condition |
1st Author's Name | Y. Nakanishi |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University:Graduate School of Electronic Science and Technology, Shizuoka University() |
2nd Author's Name | Y. Kominami |
2nd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
3rd Author's Name | K. Horikawa |
3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
4th Author's Name | T. Aoki |
4th Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
5th Author's Name | T. Nakamura |
5th Author's Affiliation | Faculty of Engineering, Shizuoka University |
6th Author's Name | N. Azuma |
6th Author's Affiliation | Center for Joint Research, Shizuoka University |
7th Author's Name | Y. Hatanaka |
7th Author's Affiliation | Research Institute of Electronics, Shizuoka University:Graduate School of Electronic Science and Technology, Shizuoka University |
Date | 1997/12/12 |
Paper # | ED97-178 |
Volume (vol) | vol.97 |
Number (no) | 438 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |