Presentation | 1997/12/12 Fabrication of field emitter arrays by using the void-cut technology Daisuke Sasaguri, Tanemasa Asano, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A new fabrication process by using the silicon-mold technique has been investigated. The silicon mold technique has superior characteristics in device uniformity and reproducibility, and various materials can be used as field emitter. In the silicon-mold technique, however, removing the Si wafer by using chemical etching appears to be very critical. In this study, we investigate the application of the void-cut technology to the fabrication of field emitter arrays. It has been found that cracks in the Si substrate where the mold is formed can be generated by implanting hydrogen ions and following thermal treatment. It has also been found that a strong bonding is required between the emitter wafer and the holding substrate for complete delamination of the Si substrate. The application of Au-Si eutetic and the spin-on-glass for the bonding has been investigated. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | field emitter arrays / silicon-mold technique / void-cut technology / hydrogen ion implantation |
Paper # | ED97-176 |
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Committee | ED |
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Conference Date | 1997/12/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of field emitter arrays by using the void-cut technology |
Sub Title (in English) | |
Keyword(1) | field emitter arrays |
Keyword(2) | silicon-mold technique |
Keyword(3) | void-cut technology |
Keyword(4) | hydrogen ion implantation |
1st Author's Name | Daisuke Sasaguri |
1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
2nd Author's Name | Tanemasa Asano |
2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
Date | 1997/12/12 |
Paper # | ED97-176 |
Volume (vol) | vol.97 |
Number (no) | 438 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |