Presentation 1997/12/12
Fabrication of field emitter arrays by using the void-cut technology
Daisuke Sasaguri, Tanemasa Asano,
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Abstract(in English) A new fabrication process by using the silicon-mold technique has been investigated. The silicon mold technique has superior characteristics in device uniformity and reproducibility, and various materials can be used as field emitter. In the silicon-mold technique, however, removing the Si wafer by using chemical etching appears to be very critical. In this study, we investigate the application of the void-cut technology to the fabrication of field emitter arrays. It has been found that cracks in the Si substrate where the mold is formed can be generated by implanting hydrogen ions and following thermal treatment. It has also been found that a strong bonding is required between the emitter wafer and the holding substrate for complete delamination of the Si substrate. The application of Au-Si eutetic and the spin-on-glass for the bonding has been investigated.
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Keyword(in English) field emitter arrays / silicon-mold technique / void-cut technology / hydrogen ion implantation
Paper # ED97-176
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Committee ED
Conference Date 1997/12/12(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of field emitter arrays by using the void-cut technology
Sub Title (in English)
Keyword(1) field emitter arrays
Keyword(2) silicon-mold technique
Keyword(3) void-cut technology
Keyword(4) hydrogen ion implantation
1st Author's Name Daisuke Sasaguri
1st Author's Affiliation Center for Microelectronic Systems, Kyushu Institute of Technology()
2nd Author's Name Tanemasa Asano
2nd Author's Affiliation Center for Microelectronic Systems, Kyushu Institute of Technology
Date 1997/12/12
Paper # ED97-176
Volume (vol) vol.97
Number (no) 438
Page pp.pp.-
#Pages 6
Date of Issue