Presentation 1997/9/26
MOSFET Statistical Modeling Method Using an Intermediate Model
Masaki Kondo, Hidetoshi Onodera, Keikichi Tamaru,
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Abstract(in English) We propose a new statistical modeling approach for deeply scaled MOSFETs. Our method is based on an intermediate model which consists of basic physical equations and parameters. In the first step, variations of 5 essencial physical parameters are modeled using the intermediate model. Then, SPICE statistical models are generated with linear transformation from the process parameters to the SPICE model parameters. The two distinctive advantages of the procedure are the high applicability to SPICE models and the consistency of statistical characteristics among different SPICE models. We have verified the method using a real variation data of a 0.35μm CMOS process.
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Keyword(in English) MOSFET / statistical model / statistical modeling / intermediate model
Paper # ED97-109
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Committee ED
Conference Date 1997/9/26(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MOSFET Statistical Modeling Method Using an Intermediate Model
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) statistical model
Keyword(3) statistical modeling
Keyword(4) intermediate model
1st Author's Name Masaki Kondo
1st Author's Affiliation Department of Electronics and Communication, Kyoto University()
2nd Author's Name Hidetoshi Onodera
2nd Author's Affiliation Department of Electronics and Communication, Kyoto University
3rd Author's Name Keikichi Tamaru
3rd Author's Affiliation Department of Electronics and Communication, Kyoto University
Date 1997/9/26
Paper # ED97-109
Volume (vol) vol.97
Number (no) 271
Page pp.pp.-
#Pages 8
Date of Issue