| Presentation | 1997/7/15 FABRICATION OF MINIATURE TUNNEL JUNCTION BY ELELCTRON-BEAM-INDUCED METAL DEPOSITION Masanori KOMURO, Hiroshi HIROSHIMA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electron-beam-induced deposition using a WF_6 precursor molecule was applied to making metal/insulator/metal tunnel junctions for single-electron transport devices. Single-wires 8 nm high and about 13nm wide were produced and their conductance showed rapid increase of about 5 orders of magnitude as electron-beam (EB) doses increased between 5 and 15 pC/shot. A single-wire resistivity at 230 K and 300 K was determined to be 6x10^<-4>Ωcm at doses exceeding 15 pC/shot. Single-tunnel junction where space with a 2.5nm increment was at the center of single-wire were produced. The electrical characteristics of these single junctions were fitted to a Fowler-Nordheim (FN) p1ot absolute value of whose gradient gradually increased with increasing space width. The barrier height of this junction was estimated to be 0.17-0.2eV. This might be caused by the change from the metallic deposit to the insulator for the single-wire as a function of EB dose. This deposition technique enabled us to fabricate transistor structure where dots were located in space and a side gate electrode was also deposited. The structure showed Coulomb oscillation even at 230 K and Monte-Carlo simulation of this device showed reasonable agreement with the experiment, assuming appropriate circuit parameters of gate capacitance and tunnel resistance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Beam-induced reaction / Nano-fabrication / Tunnel junction / Single electron transistor |
| Paper # | ED97-81 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1997/7/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | FABRICATION OF MINIATURE TUNNEL JUNCTION BY ELELCTRON-BEAM-INDUCED METAL DEPOSITION |
| Sub Title (in English) | |
| Keyword(1) | Beam-induced reaction |
| Keyword(2) | Nano-fabrication |
| Keyword(3) | Tunnel junction |
| Keyword(4) | Single electron transistor |
| 1st Author's Name | Masanori KOMURO |
| 1st Author's Affiliation | Electrotechnical Laboratory() |
| 2nd Author's Name | Hiroshi HIROSHIMA |
| 2nd Author's Affiliation | Electrotechnical Laboratory |
| Date | 1997/7/15 |
| Paper # | ED97-81 |
| Volume (vol) | vol.97 |
| Number (no) | 159 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |