Presentation 1997/7/15
Wafer-scale Nano-fabrication using Single-Ion-Implantation and Electrochemical Process
Ken-ichi Hara, Iwao Ohdomari,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) For the fabrication of nano-structures in wafer scale, we have started to combine Single Ion Implantation and electrochemical process. In this work we have tried to investigate the preferential deposition site for various metals on Si(111) surfaces well defined by a wet treatment. For the silicon surface immersed in the Cu-dissolved solution, the AFM images shows that the Cu deposition occurred only at the step-edges, while for Fe and Ni, nothing was observed on the silicon surfaces. These results can be explained by the redox potentials proper to the metal elements. In order to see the atomic scale process for Cu deposition at the step edges, in-situ EC-STM observation is now under preparation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) wet-technology / nanostructure / surface cleaning / H-terminated Si(111) / redox potential
Paper # ED97-80
Date of Issue

Conference Information
Committee ED
Conference Date 1997/7/15(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Wafer-scale Nano-fabrication using Single-Ion-Implantation and Electrochemical Process
Sub Title (in English)
Keyword(1) wet-technology
Keyword(2) nanostructure
Keyword(3) surface cleaning
Keyword(4) H-terminated Si(111)
Keyword(5) redox potential
1st Author's Name Ken-ichi Hara
1st Author's Affiliation School of Science and Engineering, Waseda University()
2nd Author's Name Iwao Ohdomari
2nd Author's Affiliation School of Science and Engineering, Waseda University:Kagami Memorial Laboratory for Material Science and Technology, Waseda University
Date 1997/7/15
Paper # ED97-80
Volume (vol) vol.97
Number (no) 159
Page pp.pp.-
#Pages 6
Date of Issue