| Presentation | 1997/7/15 Nanofabrication of n-GaAs by Electrochemical STM T. Okumura, C. Kaneshiro, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Controllable etching of n-GaAs has been successfully achieved in acidic solutions with and without Ni ions by using an electrochemical scanning tunneling microscope(STM). The realized features were as small as 10 nm. The experimental results indicate that the hole injection from an STM tip is responsible for the local etching of n-GaAs suffaces. In the same solution, Ni islands of a submicron size were deposited on GaAs beneath the STM tip. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / electrochemical STM / nanofabrication / local etching / local electrodeposition |
| Paper # | ED97-79 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1997/7/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Nanofabrication of n-GaAs by Electrochemical STM |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | electrochemical STM |
| Keyword(3) | nanofabrication |
| Keyword(4) | local etching |
| Keyword(5) | local electrodeposition |
| 1st Author's Name | T. Okumura |
| 1st Author's Affiliation | Department of Electrical Engineering, Tokyo Metropolitan University() |
| 2nd Author's Name | C. Kaneshiro |
| 2nd Author's Affiliation | Department of Electrical Engineering, Tokyo Metropolitan University:Hokkaido Univ. |
| Date | 1997/7/15 |
| Paper # | ED97-79 |
| Volume (vol) | vol.97 |
| Number (no) | 159 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |