| Presentation | 1997/7/15 Kelvin probe force microscopy for characterization of semiconductor devices and process Masafumi Tanimoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Kelvin probe force microscopy(KFM) was applied to the characterization of semiconductor devices and processes. The spatial resolution of KFM measurement was found to be 40 nm and the potential resolution was less than 5 mV. It was confirmed through investigating illumination effects on various kinds of structures that the measured KFM potential reflects the surface band structure of the sample. Two-dimensional impurity profiling of pn junction was extracted from the KFM potential image. Potential distribution under the gate of MOSFET was successfully observed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Semiconductor devices and processes / Kelvin probe force microscope / pn junction / MOSFET |
| Paper # | ED97-77 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1997/7/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Kelvin probe force microscopy for characterization of semiconductor devices and process |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor devices and processes |
| Keyword(2) | Kelvin probe force microscope |
| Keyword(3) | pn junction |
| Keyword(4) | MOSFET |
| 1st Author's Name | Masafumi Tanimoto |
| 1st Author's Affiliation | NTT Science and Core Technology Laboratory Group() |
| Date | 1997/7/15 |
| Paper # | ED97-77 |
| Volume (vol) | vol.97 |
| Number (no) | 159 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |