Presentation 1997/5/23
The permeation mechanism of Ga into InSb (II)
Y. Hayakawa, H. Ohtsu, M. Masaki, K. Takahashi, T. Koyama, M. Kumagawa,
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Abstract(in English) Peameation mechanism of Ga into an InSb substrate was investigated. The permeation distance increased and Ga profiles were flattened by increasing the annealing period and by decreasing cooling rate. The pulse striations were formed in the layer by passing the elctric current pulses during contact of the soution and the substrate. This indicated that the solid-liquid phase coexisted in the layer. The direct observation of the Ga incorporation on an InSb substrate cleary showed that the {111} planes appeared at the front of the layer and InGaSb layer was formed after the movement of liquid belt.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InSb / Ga / permeation mechanism / solid-liquid coexist
Paper # ED97-36,CPM97-24
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Committee ED
Conference Date 1997/5/23(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The permeation mechanism of Ga into InSb (II)
Sub Title (in English)
Keyword(1) InSb
Keyword(2) Ga
Keyword(3) permeation mechanism
Keyword(4) solid-liquid coexist
1st Author's Name Y. Hayakawa
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name H. Ohtsu
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name M. Masaki
3rd Author's Affiliation Research Institute of IHI
4th Author's Name K. Takahashi
4th Author's Affiliation Research Institute of IHI
5th Author's Name T. Koyama
5th Author's Affiliation Research Institute of Electronics, Shizuoka University
6th Author's Name M. Kumagawa
6th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 1997/5/23
Paper # ED97-36,CPM97-24
Volume (vol) vol.97
Number (no) 59
Page pp.pp.-
#Pages 8
Date of Issue