| Presentation | 1997/5/23 Selective growth of GaN on sub-micron pattern by MOVPE Hidetada Matsushima, Kazumasa Hiramatsu, Hisayoshi Hanai, Nobuhiko Sawaki, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The sub-micron GaN dot structure has been realized by selective area growth (SAG) using MOVPE. Truncated hexagon sub-micron dot structures having (0001) plane and {11^^-01} fasets were obtained by SAG on SiO_2 dot pattern fabricated by laser holography. Morphology of GaN depends on the crystal axis of the sub-micron line patterns. The lateral growth rate to the line pattern along <11^^-00> direction is much faster than that to the <112^^-0> direction. So if we use sub-micron line patterns along <11^^-OO> axis the GaN structures coalesce, resulting in buried structures of the SiO_2 mask. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MOVPE / sub-micron dot / selective area growth |
| Paper # | ED97-32,CPM97-20 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1997/5/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Selective growth of GaN on sub-micron pattern by MOVPE |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MOVPE |
| Keyword(3) | sub-micron dot |
| Keyword(4) | selective area growth |
| 1st Author's Name | Hidetada Matsushima |
| 1st Author's Affiliation | Department of Electronics, Nagoya University() |
| 2nd Author's Name | Kazumasa Hiramatsu |
| 2nd Author's Affiliation | Department of Electrical and Electronic, Mie University |
| 3rd Author's Name | Hisayoshi Hanai |
| 3rd Author's Affiliation | Department of Electronics, Nagoya University |
| 4th Author's Name | Nobuhiko Sawaki |
| 4th Author's Affiliation | Department of Electronics, Nagoya University |
| Date | 1997/5/23 |
| Paper # | ED97-32,CPM97-20 |
| Volume (vol) | vol.97 |
| Number (no) | 59 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |