| Presentation | 2001/10/19 Low Temperature Epitaxial Growth of 3C-SiC by Triode Plasma CVD Using Dimethylsilane and Hydrogen Masahiro HASHIBA, Tomohiko MAEDA, Kanji YASUI, Tadashi AKAHANE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The cubic-silicon carbide(3C-SiC) were grown at low temperatures on Si substrates by triode plasma CVD. By the high density hydrogen radicals generated by rf plasma, epitaxial growth at 900℃ was realized, while the growth by low pressure CVD was realized at higher than 950℃ . The activation energy of epitaxial growth rate was 48kcal/mol, which was about 25kcal/mol smaller than that of low pressure CVD. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon carbide / epitaxial growth / triode plasma CVD / dimethylsilane |
| Paper # | CPM2001-112 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2001/10/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low Temperature Epitaxial Growth of 3C-SiC by Triode Plasma CVD Using Dimethylsilane and Hydrogen |
| Sub Title (in English) | |
| Keyword(1) | silicon carbide |
| Keyword(2) | epitaxial growth |
| Keyword(3) | triode plasma CVD |
| Keyword(4) | dimethylsilane |
| 1st Author's Name | Masahiro HASHIBA |
| 1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Tomohiko MAEDA |
| 2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Kanji YASUI |
| 3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 4th Author's Name | Tadashi AKAHANE |
| 4th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| Date | 2001/10/19 |
| Paper # | CPM2001-112 |
| Volume (vol) | vol.101 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |