Presentation 2001/10/4
TlInGaAs/Inp Double Hetero Structures LED
Akiko Mizobata, Hwi Jae Lee, Kenta Konishi, Osamu Maeda, Hajime Asahi,
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Abstract(in English) TlInGaAs qtuternary layers arw successfully grown on InP substrates by gas source molecular beam epitaxy. TlInGaAs is the alloy consisting of semimetal TlAs and semiconductor InGaAs. We recently proposed this new semiconductor material system for the temperature insensitive wavelength laser diodes, which is important for the WDM systems. We have already observed very small temperature variation of the photoluminescence(PL)peak energy as small as -0.03meV/K for the TlInGaAs/InP double heterostructures(DHs)with Tl composition of l3%. This paper describes the successful fabrication of TlInGaAs/InP DH light emitting diodes(LEDs)and their properties.
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Keyword(in English) thallium containing semiconductor / long wavelength laser diode / temperature independent bandgap / LED
Paper # ED2001-131, CPM2001-84
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Committee CPM
Conference Date 2001/10/4(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) TlInGaAs/Inp Double Hetero Structures LED
Sub Title (in English)
Keyword(1) thallium containing semiconductor
Keyword(2) long wavelength laser diode
Keyword(3) temperature independent bandgap
Keyword(4) LED
1st Author's Name Akiko Mizobata
1st Author's Affiliation The Institute of scientific and Industrial Research, Osaka University()
2nd Author's Name Hwi Jae Lee
2nd Author's Affiliation The Institute of scientific and Industrial Research, Osaka University
3rd Author's Name Kenta Konishi
3rd Author's Affiliation The Institute of scientific and Industrial Research, Osaka University
4th Author's Name Osamu Maeda
4th Author's Affiliation The Institute of scientific and Industrial Research, Osaka University
5th Author's Name Hajime Asahi
5th Author's Affiliation The Institute of scientific and Industrial Research, Osaka University
Date 2001/10/4
Paper # ED2001-131, CPM2001-84
Volume (vol) vol.101
Number (no) 338
Page pp.pp.-
#Pages 5
Date of Issue