| Presentation | 2001/7/27 Electrical properties and Structure of Ferroelectric PbTiO_3 thin Films formed by metalorganic decomposition Kenji Kimura, Hisashi Fukuda, Shigeru Nomura, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The FET-type ferroelectric memory with ferroelectric thin films as the gate dielectric is attracting much attention as next generation ULSIs. In this study, we have fabricated the FET-type ferroelectric memory using PbTiO_3 thin film on Si by metalorganic decomposition(MOD). We have fabricated MFIS structure with SrTiO_3 and Y_2O_3 as buffer layer to protect interfacial reaction between Si and PbTiO_3 thin film. The SrTiO_3 film as a buffer layer after annealing O_2 ambient showed good crystalinity, and high dielectric constant about 157 in maximum. Capacitance-voltage characteristics indicated a hysteresis loop due to polarization effect. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PbTiO_3 / SrTiO_3 / Y_2O_3 / MFIS-FET / ferroelectric |
| Paper # | CPM2001-50 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2001/7/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical properties and Structure of Ferroelectric PbTiO_3 thin Films formed by metalorganic decomposition |
| Sub Title (in English) | |
| Keyword(1) | PbTiO_3 |
| Keyword(2) | SrTiO_3 |
| Keyword(3) | Y_2O_3 |
| Keyword(4) | MFIS-FET |
| Keyword(5) | ferroelectric |
| 1st Author's Name | Kenji Kimura |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology() |
| 2nd Author's Name | Hisashi Fukuda |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology |
| 3rd Author's Name | Shigeru Nomura |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology |
| Date | 2001/7/27 |
| Paper # | CPM2001-50 |
| Volume (vol) | vol.101 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |