Presentation 2001/7/26
Pt-Wo_3 Gate MOSFET Sensor For CO Gas Sensor
Tetsuya NAGAHORI, Hisashi FUKUDA, Shigeru NOMURA,
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Abstract(in English) The MOSFET gas sensors to detect ppm order of carbon monoxide(CO)gas have been fabricated. The MOSFET has the stacked gate structure with platinum layer in which CO molecules are adsorbed and diffused, and with tungsten oxide film as a catalytic layer. the device characteristics were investigated at the operating temperature of 20, 75and 100℃, respectively. The increase of drain current in the saturation region and shift of threshold voltage toward negative bias direction were observed after CO gas exposure. The sensing mechanism was analyzed from the adsorption and desorption of CO molecules at the Pt/WO_3 interface. We have confirmed MOSFET sensitivity of 54 ppm at the operation of 20 ℃ in air.
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Keyword(in English) MOSFET / gas sensor / carbon monoxide / Pt/WO_3
Paper # CPM2001-46
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Committee CPM
Conference Date 2001/7/26(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Pt-Wo_3 Gate MOSFET Sensor For CO Gas Sensor
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) gas sensor
Keyword(3) carbon monoxide
Keyword(4) Pt/WO_3
1st Author's Name Tetsuya NAGAHORI
1st Author's Affiliation Department of Electrical and Electronic Enginnering Faculty of Engineering, Muroran Institute of Technology()
2nd Author's Name Hisashi FUKUDA
2nd Author's Affiliation Department of Electrical and Electronic Enginnering Faculty of Engineering, Muroran Institute of Technology
3rd Author's Name Shigeru NOMURA
3rd Author's Affiliation Department of Electrical and Electronic Enginnering Faculty of Engineering, Muroran Institute of Technology
Date 2001/7/26
Paper # CPM2001-46
Volume (vol) vol.101
Number (no) 244
Page pp.pp.-
#Pages 6
Date of Issue