Presentation | 2001/7/26 Pt-Wo_3 Gate MOSFET Sensor For CO Gas Sensor Tetsuya NAGAHORI, Hisashi FUKUDA, Shigeru NOMURA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The MOSFET gas sensors to detect ppm order of carbon monoxide(CO)gas have been fabricated. The MOSFET has the stacked gate structure with platinum layer in which CO molecules are adsorbed and diffused, and with tungsten oxide film as a catalytic layer. the device characteristics were investigated at the operating temperature of 20, 75and 100℃, respectively. The increase of drain current in the saturation region and shift of threshold voltage toward negative bias direction were observed after CO gas exposure. The sensing mechanism was analyzed from the adsorption and desorption of CO molecules at the Pt/WO_3 interface. We have confirmed MOSFET sensitivity of 54 ppm at the operation of 20 ℃ in air. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOSFET / gas sensor / carbon monoxide / Pt/WO_3 |
Paper # | CPM2001-46 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2001/7/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Pt-Wo_3 Gate MOSFET Sensor For CO Gas Sensor |
Sub Title (in English) | |
Keyword(1) | MOSFET |
Keyword(2) | gas sensor |
Keyword(3) | carbon monoxide |
Keyword(4) | Pt/WO_3 |
1st Author's Name | Tetsuya NAGAHORI |
1st Author's Affiliation | Department of Electrical and Electronic Enginnering Faculty of Engineering, Muroran Institute of Technology() |
2nd Author's Name | Hisashi FUKUDA |
2nd Author's Affiliation | Department of Electrical and Electronic Enginnering Faculty of Engineering, Muroran Institute of Technology |
3rd Author's Name | Shigeru NOMURA |
3rd Author's Affiliation | Department of Electrical and Electronic Enginnering Faculty of Engineering, Muroran Institute of Technology |
Date | 2001/7/26 |
Paper # | CPM2001-46 |
Volume (vol) | vol.101 |
Number (no) | 244 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |