| Presentation | 2001/7/26 Structure and Electrical Properties of In-Doped ZnS Films Prepared by Radio-Frequency Magnetron Sputtering Tomoaki SUGAWARA, Isao SHIMONO, Hisashi FUKUDA, MAsaki YOSHINO, Motokazu NISHINO, Shigeru NOMURA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In-doped ZnS films prepared using RF maqnetron sputtering have been investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM), Hall measurement, optical transmission spectra measurement, Auger electron spectroscopy(AES) and X-ray photoelectron spectroscopy(XPS). The XRD results indicated the film prepared at argon(Ar)gas pressure of 1mTorr was ZnS with crystal structure of wurtzite or zinc blend. The composition of the film prepared at Ar gas pressure of 4mTorr was Zn_<1.00>In_<0.07>S_<0.14>O_<0.85> using AES results. The AES and XRD data indicated that the structure close to wurtzite of ZnO than zinc blend of ZnS is obtained for Ar gas pressure of 3-5 mTorr in the sputtering. The result of Hall measurement showed the resistivity of 0.01Ω・cm, the carrier concentration of 2×10^<20>cm^3 and the mobility of 2-5cm^2/V^<-1>/s^<-1> for the films prepared at Ar gas pressure of 3-5mTorr. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | zinc sulfide / indium doping / film / sputtering / structure / conductivity |
| Paper # | CPM2001-45 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2001/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structure and Electrical Properties of In-Doped ZnS Films Prepared by Radio-Frequency Magnetron Sputtering |
| Sub Title (in English) | |
| Keyword(1) | zinc sulfide |
| Keyword(2) | indium doping |
| Keyword(3) | film |
| Keyword(4) | sputtering |
| Keyword(5) | structure |
| Keyword(6) | conductivity |
| 1st Author's Name | Tomoaki SUGAWARA |
| 1st Author's Affiliation | Hokkaido Industrial Technology Center() |
| 2nd Author's Name | Isao SHIMONO |
| 2nd Author's Affiliation | Hokkaido Industrial Technology Center |
| 3rd Author's Name | Hisashi FUKUDA |
| 3rd Author's Affiliation | Muroran Institute of Technology |
| 4th Author's Name | MAsaki YOSHINO |
| 4th Author's Affiliation | Hokkaido Polytechnic College |
| 5th Author's Name | Motokazu NISHINO |
| 5th Author's Affiliation | Hokkaido Polytechnic College |
| 6th Author's Name | Shigeru NOMURA |
| 6th Author's Affiliation | Muroran Institute of Technology |
| Date | 2001/7/26 |
| Paper # | CPM2001-45 |
| Volume (vol) | vol.101 |
| Number (no) | 244 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |