Presentation 2001/7/26
AFM observations of epitaxially grown(III)HfN film and (III)Cu/(III)HfN bilayered film on (III)Si
Satoko SHINKAI, Katsutaka SASAKI,
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Abstract(in English) We evaluated the surface morphology of epitaxial(111)HfN and (001)HfN films, and epitaxial(111)Cu and single-oriented(110)Cu films grown on each epitaxial HfN film, by AFM. It was revealed that each epitaxial HfN film is very flat and has the same surface roughness with that of Si wafer, and epitaxital(111)Cu film on (111)HfN has only the peak-valley height between several atomic layer and a few decades atomic layer, in spite of the thickness of 200nm. In addition, single-oriented(110)Cu film on (001)HfN film was more smooth than that of the (111)Cu. There-fore, it is concluded that the application of epitaxial HfN films to the Cu metallization system is useful for realizing Cu films with the smooth surface as an overlayer.
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Keyword(in English) surface morphology / AFM / epitaxial HfN film / Cu metallization / surface roughness
Paper # CPM2001-43
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Committee CPM
Conference Date 2001/7/26(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) AFM observations of epitaxially grown(III)HfN film and (III)Cu/(III)HfN bilayered film on (III)Si
Sub Title (in English)
Keyword(1) surface morphology
Keyword(2) AFM
Keyword(3) epitaxial HfN film
Keyword(4) Cu metallization
Keyword(5) surface roughness
1st Author's Name Satoko SHINKAI
1st Author's Affiliation Reseach Fellow of the Japan Society for the Promotion of Science(PD)()
2nd Author's Name Katsutaka SASAKI
2nd Author's Affiliation Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, Koen-cho 165, Kitami 090-8507, Japan
Date 2001/7/26
Paper # CPM2001-43
Volume (vol) vol.101
Number (no) 244
Page pp.pp.-
#Pages 6
Date of Issue