Presentation 2001/7/26
Fundamental behavior of vacancies attributed to stress-induced migration
Minoru Aoyagi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The stress-induced migration phenomenon is one of the problems related to the reliability of metal interconnections on semiconductor devices. The phenomenon causes voids and fractures in the interconnections when devices are maintained at high temperatures for long periods. The purpose of this paper is to clarify the mechanism of phenomenon. First, on a spherical metal sample with a spherical void, vacancy absorption or emission was considered between the void surface and the sample surface. Next, vacancy behavior on the sample with applied external stress was analyzed in order to clarify the vacancy behavior under thermal stress. These results reveal that the surface of the void or the sample becomes a vacancy sink or a vacancy source depending on the relative value among the sample surface stress, the void surface stress and the external stress. Lastly, the physical model was proposed in order to adapt these results to the stress-induced migration phenomenon.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) stress / migration / mechanism / vacancy / void / stress
Paper # CPM2001-42
Date of Issue

Conference Information
Committee CPM
Conference Date 2001/7/26(1days)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fundamental behavior of vacancies attributed to stress-induced migration
Sub Title (in English)
Keyword(1) stress
Keyword(2) migration
Keyword(3) mechanism
Keyword(4) vacancy
Keyword(5) void
Keyword(6) stress
1st Author's Name Minoru Aoyagi
1st Author's Affiliation Department of Electrical and Electronic Engineering, Tomakomai National College of Technology()
Date 2001/7/26
Paper # CPM2001-42
Volume (vol) vol.101
Number (no) 244
Page pp.pp.-
#Pages 6
Date of Issue