| Presentation | 2001/7/26 Structural and electric properties of Y_2O_3 thin films formed by Metal-organic decomposition Shunpei HONMA, Hisashi FUKUDA, Shigeru NOMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Yttrium oxide(Y_2O_3)thin films were formed by metal-organic decomposition(MOD). The Y_2O_3 thin films were well crystallized after 600℃ annealing in oxygen atmosphere. The surface morphology indicates polycrystalline structure with small grains. The Y_2O_3 thin films after 900℃ annealing indicates the dielectric constant of 11 in maximum and leakage current of 10^<-5> A/cm^2 order at 5MV/cm. Next, thinning of the films were carried out by addition of butyl acetate in the MOD. Thin Y_2O_3 films indicates the crystallinity degradation and the decrease of dielectric constants. Low leakage current of 10^<-7> A/cm^2 and higher breakdown strength of 7 MV/cm for well optimized addition of butyl acetate. Minimum equivalent thickness of 6.8 nm was obtained for thin Y_2O_3 films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | metal-organic decomposition / Y_2O_3 / thin films / gate dielectrics / MOFET |
| Paper # | CPM2001-41 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2001/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structural and electric properties of Y_2O_3 thin films formed by Metal-organic decomposition |
| Sub Title (in English) | |
| Keyword(1) | metal-organic decomposition |
| Keyword(2) | Y_2O_3 |
| Keyword(3) | thin films |
| Keyword(4) | gate dielectrics |
| Keyword(5) | MOFET |
| 1st Author's Name | Shunpei HONMA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology() |
| 2nd Author's Name | Hisashi FUKUDA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology |
| 3rd Author's Name | Shigeru NOMURA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology |
| Date | 2001/7/26 |
| Paper # | CPM2001-41 |
| Volume (vol) | vol.101 |
| Number (no) | 244 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |