Presentation 2001/7/26
Electrical properties and structure of titanium oxide thin films formed by metalorganic decomposition.
Shinichi MAEDA, Hisashi FUKUDA, Shigeru NOMURA,
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Abstract(in English) High-k dielectric thin films have attained considerable attention as possible replacements for dielectric insulators of sub-0.1μm MOSFET in future ULSIs.Bulk TiO_2 has higher dielectric constant as compared to another high-k dielectric materials. Thus, TiO_2 is one of the expected high-k dielectric materials. In this study, we formed TiO_2 thin film on a Si substrate by metalorganic decomposition(MOD). And, the crystal structure and the electrical properties of the film were investigated. TiO_2 thin film crystallized in the anatase structure and the rutile structure after annealing at 600℃. The TiO_2 thin film becomes to the rutile structure after annealing above 700℃. The dielectric constant of 50 in maximum was obtained for the sample annealed at 700℃. In addition, we confirmed that the dielectric constant decreases corresponding to the change of TiO_2 thin film surface structure.
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Keyword(in English) TiO_2 / MOSFET / High-k dielectric / metalorganic decomposition
Paper # CPM2001-40
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Committee CPM
Conference Date 2001/7/26(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical properties and structure of titanium oxide thin films formed by metalorganic decomposition.
Sub Title (in English)
Keyword(1) TiO_2
Keyword(2) MOSFET
Keyword(3) High-k dielectric
Keyword(4) metalorganic decomposition
1st Author's Name Shinichi MAEDA
1st Author's Affiliation Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology()
2nd Author's Name Hisashi FUKUDA
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology
3rd Author's Name Shigeru NOMURA
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology
Date 2001/7/26
Paper # CPM2001-40
Volume (vol) vol.101
Number (no) 244
Page pp.pp.-
#Pages 6
Date of Issue