Presentation | 2001/7/26 Electrical properties and structure of titanium oxide thin films formed by metalorganic decomposition. Shinichi MAEDA, Hisashi FUKUDA, Shigeru NOMURA, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | High-k dielectric thin films have attained considerable attention as possible replacements for dielectric insulators of sub-0.1μm MOSFET in future ULSIs.Bulk TiO_2 has higher dielectric constant as compared to another high-k dielectric materials. Thus, TiO_2 is one of the expected high-k dielectric materials. In this study, we formed TiO_2 thin film on a Si substrate by metalorganic decomposition(MOD). And, the crystal structure and the electrical properties of the film were investigated. TiO_2 thin film crystallized in the anatase structure and the rutile structure after annealing at 600℃. The TiO_2 thin film becomes to the rutile structure after annealing above 700℃. The dielectric constant of 50 in maximum was obtained for the sample annealed at 700℃. In addition, we confirmed that the dielectric constant decreases corresponding to the change of TiO_2 thin film surface structure. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | TiO_2 / MOSFET / High-k dielectric / metalorganic decomposition |
Paper # | CPM2001-40 |
Date of Issue |
Conference Information | |
Committee | CPM |
---|---|
Conference Date | 2001/7/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electrical properties and structure of titanium oxide thin films formed by metalorganic decomposition. |
Sub Title (in English) | |
Keyword(1) | TiO_2 |
Keyword(2) | MOSFET |
Keyword(3) | High-k dielectric |
Keyword(4) | metalorganic decomposition |
1st Author's Name | Shinichi MAEDA |
1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology() |
2nd Author's Name | Hisashi FUKUDA |
2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology |
3rd Author's Name | Shigeru NOMURA |
3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology |
Date | 2001/7/26 |
Paper # | CPM2001-40 |
Volume (vol) | vol.101 |
Number (no) | 244 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |