| Presentation | 2001/5/18 Fabrication and Proposition of High Sensitive Chemical Potential Sensor Used Charge Transfer Technique Kazuaki Sawada, Hidekuni Takao, Makoto Ishida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AMIS (Accumulation Method Ion Sensor), which is expected as high sensitive ion sensor, is proposed and prototype one is fabricated using a CCD process. The principle of the AMIS is based on the charge transfer techniques. The AMIS is operated in a signal integration mode. Charges corresponded to pH value is transferred from a sensing part to the floating diffusion region on several times, and the signal charges are accumulated in the floating diffusion region. It is expected that the SNR of the pH information increases √n times, as the signal is integrated n times. The output signal of a sensing part was measured by using the equivalent voltages. It was found that the output signal from AMPS, which was integrated 5 times, was lineally changed and the total sensitivity was 1.7V/pH. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ISFET / Charge Transfer / Ion sensor / pH sensor / CCD |
| Paper # | ED2001-39,CPM2001-26,SDM2001-39 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2001/5/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Proposition of High Sensitive Chemical Potential Sensor Used Charge Transfer Technique |
| Sub Title (in English) | |
| Keyword(1) | ISFET |
| Keyword(2) | Charge Transfer |
| Keyword(3) | Ion sensor |
| Keyword(4) | pH sensor |
| Keyword(5) | CCD |
| 1st Author's Name | Kazuaki Sawada |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology() |
| 2nd Author's Name | Hidekuni Takao |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology |
| 3rd Author's Name | Makoto Ishida |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology |
| Date | 2001/5/18 |
| Paper # | ED2001-39,CPM2001-26,SDM2001-39 |
| Volume (vol) | vol.101 |
| Number (no) | 81 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |