| Presentation | 2001/5/18 Buffered HF Etching Characteristics of Si_<1-x-y>Ge_xC_y Epitaxial Films Shoichi Ishida, Mitsuo Miyamoto, Yoshiaki Hashiba, Takashi Matsuura, Junichi Murota, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The etching characteristics of the Si_<1-x-y>Ge_xC_y epitaxial films in BHF (NH_4F/HF/H_2O) have been studied by a step profiler and an angle resolved XPS. The Si film (x=0,y=0) is etched by the alkaline range BHF. The Ge epitaxial film (x=1,y=0) is etched only in BHF with NH_4F. The Si_<1-x-y>Ge_xC_y films (X=0.16-0.413) were etched in the alkaline range BHF (HF=0.01wt%, NH_4F=40wt%). The etching rates of the Si_<1-x-y>Ge_xC_y films in the alkaline range BHF are less than those of the Si_<1-x-y>Ge_x film. The XPS intensity ratio as a function of the take-off-angle shows that the surface segregation of Ge is in the monolayer order on the Si_<0.6>Ge_<0.4> surface and increases with pH. It is suggested that the surface segregation of Ge on the Si_<0.6>Ge_<0.4> film surface occur by difference of the etching characteristics of the Si and Ge in BHF. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BHF / Etching / SiGeC / Epitaxial / XPS / Segregation |
| Paper # | ED2001-34,CPM2001-21,SDM2001-34 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2001/5/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Buffered HF Etching Characteristics of Si_<1-x-y>Ge_xC_y Epitaxial Films |
| Sub Title (in English) | |
| Keyword(1) | BHF |
| Keyword(2) | Etching |
| Keyword(3) | SiGeC |
| Keyword(4) | Epitaxial |
| Keyword(5) | XPS |
| Keyword(6) | Segregation |
| 1st Author's Name | Shoichi Ishida |
| 1st Author's Affiliation | Morita Chemical Industries Co., Ltd.:Laboratory for Electronic Intelligent Systems, RIEC, Tohoku University() |
| 2nd Author's Name | Mitsuo Miyamoto |
| 2nd Author's Affiliation | Morita Chemical Industries Co., Ltd. |
| 3rd Author's Name | Yoshiaki Hashiba |
| 3rd Author's Affiliation | Laboratory for Electronic Intelligent Systems, RIEC, Tohoku University:Hitachi Kokusai Electric |
| 4th Author's Name | Takashi Matsuura |
| 4th Author's Affiliation | Laboratory for Electronic Intelligent Systems, RIEC, Tohoku University |
| 5th Author's Name | Junichi Murota |
| 5th Author's Affiliation | Laboratory for Electronic Intelligent Systems, RIEC, Tohoku University |
| Date | 2001/5/18 |
| Paper # | ED2001-34,CPM2001-21,SDM2001-34 |
| Volume (vol) | vol.101 |
| Number (no) | 81 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |