| Presentation | 2001/5/17 Study of electron irradiation effect on CuInSe_2 thin films Hae-Seok Lee, Yoshi Kaieda, Naoki Fujita, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Effect of 2MeV and 3MeV electron irradiation on the electrical properties of CuInSe_2 thin films has been investigated. CIS thin films were epitaxially grown on the GaAs(001) substrates by RF sputtering. As the electron fierce exceeded 1×10^<17>cm^<-2>, the carrier concentration and mobility of CIS thin films were degraded. The carrier removal rate with electron fluence was determined to be about 1cm^<-1> which is lower than other solar cells. In this study, no significant change in the carrier removal rate was observed as a function of electron energy. From temperature dependence of the carrier density, electron irradiation induced defect was characterized and its dependence on the electron fluence was discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CuInSe_2 / irradiation induced defect / carrier removal rate / solar cell |
| Paper # | ED2001-18,CPM2001-5,SDM2001-18 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2001/5/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of electron irradiation effect on CuInSe_2 thin films |
| Sub Title (in English) | |
| Keyword(1) | CuInSe_2 |
| Keyword(2) | irradiation induced defect |
| Keyword(3) | carrier removal rate |
| Keyword(4) | solar cell |
| 1st Author's Name | Hae-Seok Lee |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | Yoshi Kaieda |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 3rd Author's Name | Naoki Fujita |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 4th Author's Name | Hiroshi Okada |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 5th Author's Name | Akihiro Wakahara |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 6th Author's Name | Akira Yoshida |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| Date | 2001/5/17 |
| Paper # | ED2001-18,CPM2001-5,SDM2001-18 |
| Volume (vol) | vol.101 |
| Number (no) | 80 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |