Presentation 2000/10/19
Low-temperature deposition of ITO thin films by sputter-beam deposition
Takakazu Kiyomura, Ryoma OHKI, Yoichi Hoshi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Tin(Sn)-doped indium oxide(ITO)thin films have been deposited at a low temperature(about room temperature)by using sputter-beam deposition(SBD)in which kinetic energies of the sputtered particles incident to the substrate normal can be controlled in the formation of the films. Structure of the ITO films changed significantly with gas pressure in the sputtering source. The ITO films obtained at a gas pressure of 0.7mTorr had a crystalline phase, while at gas pressures above 2mTorr, amorphous-like films were obtained. These films had excellent surface smoothness along with a low resistivity between 7.2×10^<-4>Ω・cm and 3×10^<-4>Ω・cm and high transparency in visible region. These indicate the high potential of SBD for obtaining low-resistivity ITO thin films at low temperatures.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) indium tin oxide / ITO / sputter-beam deposition / structural properties / optoelectronic properties
Paper # CPM2000-126
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Committee CPM
Conference Date 2000/10/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low-temperature deposition of ITO thin films by sputter-beam deposition
Sub Title (in English)
Keyword(1) indium tin oxide
Keyword(2) ITO
Keyword(3) sputter-beam deposition
Keyword(4) structural properties
Keyword(5) optoelectronic properties
1st Author's Name Takakazu Kiyomura
1st Author's Affiliation Department of Electronics and Computer Engineering, Faculty of Engineering Tokyo Institute of Polytechnics()
2nd Author's Name Ryoma OHKI
2nd Author's Affiliation Department of Electronics and Computer Engineering, Faculty of Engineering Tokyo Institute of Polytechnics
3rd Author's Name Yoichi Hoshi
3rd Author's Affiliation Department of Electronics and Computer Engineering, Faculty of Engineering Tokyo Institute of Polytechnics
Date 2000/10/19
Paper # CPM2000-126
Volume (vol) vol.100
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue