Presentation | 2000/10/19 Formation of YSZ Ultrathin Film for Gate Insulator by Metallic/Oxide Mode Deposition Kenji Sasaki, Tatsuhiro Hasu, Kimihiro Sasaki, Tomonobu Hata, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have been evaluating heteroepitaxial YSZ thin films fabricated by reactive sputtering. We found that relative dielectric constant is 20~25. Then we examined the formation technique of ultrathin film for the next generation's gate insulator. We found that Zr, Si atoms in thin films diffused mutually when YSZ films were deposited at metallic mode / 800℃ conditions. Therefore deposition at lower temperature was carried out, but leakage characteristics could not be improved. Since oxygen deficient in the YSZ thin film was considered to cause this, oxide mode deposition was performed, and the leakage characteristics were significantly improved. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | YSZ / gate insulator / metallic mode / oxide mode / diffusion / leakage characteristics |
Paper # | CPM2000-123 |
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Committee | CPM |
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Conference Date | 2000/10/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Formation of YSZ Ultrathin Film for Gate Insulator by Metallic/Oxide Mode Deposition |
Sub Title (in English) | |
Keyword(1) | YSZ |
Keyword(2) | gate insulator |
Keyword(3) | metallic mode |
Keyword(4) | oxide mode |
Keyword(5) | diffusion |
Keyword(6) | leakage characteristics |
1st Author's Name | Kenji Sasaki |
1st Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University() |
2nd Author's Name | Tatsuhiro Hasu |
2nd Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
3rd Author's Name | Kimihiro Sasaki |
3rd Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
4th Author's Name | Tomonobu Hata |
4th Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
Date | 2000/10/19 |
Paper # | CPM2000-123 |
Volume (vol) | vol.100 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |