Presentation 2000/10/19
Sequential Epitaxial Growth of(111)Cu/(111)HfN Bilayered Film on(111)Si and Diffusion Barrier Property of(111)HfN Film
Satoko SHINKAI, Katsutaka SASAKI,
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Abstract(in English) Sequential epitaxial growth of(111)Cu top metallization layer with the excellent EM resistance could be realized on the epitaxial(111)HfN/(111)Si system without intentional substrate heating. Then, thinning limit of HfN film as a barrier layer was investigated, in order to confirm whether this(111)Cu/(111)HfN/(111)Si contact system can tolerate temperature(400℃, 30min)required for the normal post-metallization process and the system is appicable to the sub-0.1μm design rule. As a result, it was revealed that the system is sufficiently stable up to the temperature required for the normal post-metallization process, maintaining the initial contact structure of sequential epitaxial growth of(111)Cu/(111)HfN/(111)Si, even if the thickness of HfN film as a diffusion barrier was reduced to 80 Å. Therefore, it was concluded that the sequential epitaxial growth of(111)Cu/(111)HfN bilayered film on(111)Si is one of the most promising methods for improving the reliability of Cu metallization system for Si-LSI.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cu metallization / lattice mismatch / XRD pole figure / sequential epitaxial growth / EM resistance
Paper # CPM2000-122
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Committee CPM
Conference Date 2000/10/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Sequential Epitaxial Growth of(111)Cu/(111)HfN Bilayered Film on(111)Si and Diffusion Barrier Property of(111)HfN Film
Sub Title (in English)
Keyword(1) Cu metallization
Keyword(2) lattice mismatch
Keyword(3) XRD pole figure
Keyword(4) sequential epitaxial growth
Keyword(5) EM resistance
1st Author's Name Satoko SHINKAI
1st Author's Affiliation Research Fellow of the Japan Society for the Promotion of Science.(PD)()
2nd Author's Name Katsutaka SASAKI
2nd Author's Affiliation Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
Date 2000/10/19
Paper # CPM2000-122
Volume (vol) vol.100
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue