Presentation | 2000/10/19 Sequential Epitaxial Growth of(111)Cu/(111)HfN Bilayered Film on(111)Si and Diffusion Barrier Property of(111)HfN Film Satoko SHINKAI, Katsutaka SASAKI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Sequential epitaxial growth of(111)Cu top metallization layer with the excellent EM resistance could be realized on the epitaxial(111)HfN/(111)Si system without intentional substrate heating. Then, thinning limit of HfN film as a barrier layer was investigated, in order to confirm whether this(111)Cu/(111)HfN/(111)Si contact system can tolerate temperature(400℃, 30min)required for the normal post-metallization process and the system is appicable to the sub-0.1μm design rule. As a result, it was revealed that the system is sufficiently stable up to the temperature required for the normal post-metallization process, maintaining the initial contact structure of sequential epitaxial growth of(111)Cu/(111)HfN/(111)Si, even if the thickness of HfN film as a diffusion barrier was reduced to 80 Å. Therefore, it was concluded that the sequential epitaxial growth of(111)Cu/(111)HfN bilayered film on(111)Si is one of the most promising methods for improving the reliability of Cu metallization system for Si-LSI. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Cu metallization / lattice mismatch / XRD pole figure / sequential epitaxial growth / EM resistance |
Paper # | CPM2000-122 |
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Committee | CPM |
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Conference Date | 2000/10/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Sequential Epitaxial Growth of(111)Cu/(111)HfN Bilayered Film on(111)Si and Diffusion Barrier Property of(111)HfN Film |
Sub Title (in English) | |
Keyword(1) | Cu metallization |
Keyword(2) | lattice mismatch |
Keyword(3) | XRD pole figure |
Keyword(4) | sequential epitaxial growth |
Keyword(5) | EM resistance |
1st Author's Name | Satoko SHINKAI |
1st Author's Affiliation | Research Fellow of the Japan Society for the Promotion of Science.(PD)() |
2nd Author's Name | Katsutaka SASAKI |
2nd Author's Affiliation | Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology |
Date | 2000/10/19 |
Paper # | CPM2000-122 |
Volume (vol) | vol.100 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |