Presentation 2000/10/19
Heteroepitaxial Growth of Bi_2Sr_2CuO_x thin films on Si(001)
Toyokazu TAMBO, Atsushi SHIMIZU, Akiyoshi MATSUDA, Chiei TATSUYAMA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have studied the heteroepitaxial growth of superconductor thin films on a Si substrate by molecular beam epitaxy. A SrO layer is used as a buffer layer to avoid the interdiffusion at the interface of Si and Bi_2Sr_2CuO_x. The mismatch is -5.4% and 5.1% for Si-SrO and SrO-Bi_2Sr_2CuO_x, repectively. The crystallinity of films is evaulated by the X-ray diffraction patterns. The appropriate growth temperature for the Bi_2Sr_2CuO_x thin films is 600℃. But the sample degenerates in air. So the improvement of this film was performed by annealing or 2-step growth. In those trials the 2-step growth at 600 and 700℃ produces a good result.
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Keyword(in English) superconductor / thin film / MBE / Si / SrO / BiSrCuO / XRD
Paper # CPM2000-120
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Conference Information
Committee CPM
Conference Date 2000/10/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Heteroepitaxial Growth of Bi_2Sr_2CuO_x thin films on Si(001)
Sub Title (in English)
Keyword(1) superconductor
Keyword(2) thin film
Keyword(3) MBE
Keyword(4) Si
Keyword(5) SrO
Keyword(6) BiSrCuO
Keyword(7) XRD
1st Author's Name Toyokazu TAMBO
1st Author's Affiliation Faculty of Engineering, Toyama University()
2nd Author's Name Atsushi SHIMIZU
2nd Author's Affiliation Faculty of Engineering, Toyama University
3rd Author's Name Akiyoshi MATSUDA
3rd Author's Affiliation Faculty of Engineering, Toyama University
4th Author's Name Chiei TATSUYAMA
4th Author's Affiliation Faculty of Engineering, Toyama University
Date 2000/10/19
Paper # CPM2000-120
Volume (vol) vol.100
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue