| Presentation | 2000/10/19 MBE growth of Si_<0.75>Ge_<0.25> Alloys Using Short-period(Si_m/Ge_n)_N Superlattices on Si(001) Substrate M.M. Rahman, H. Matada, T. Tambo, C. Tatsuyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Si_<0.75>Ge_<0.25> alloy layers were grown on Si(001)substrates by MBE process using step-by-step grown superlattices(Si_m/Ge_n)_N(SLs) as buffer layers. Residual strain, surface roughness and dislocations of the top alloy layers have been characterized by x-ray diffraction(XRD), atomic force microscopy(AFM) and cross-sectional transmission electron microscopy(XTEM), respectively. Insertion of 1-step(Si_<14>/Ge_1)_<20> SL buffer layer drastically decreases root-mean-squared(RMS) surface roughness. RMS roughness also changes when Ge is deposited from 1-monolayer mode to 2-monolayer mode. XTEM images verify that SL buffers help to relax the strain of the alloy layer by introducing dislocations in the buffer layers or deflect them in to the substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | (Si_m/Ge_n)_N superlattice / Residual strain / surface roughness / Atomic force microscopy / MBE |
| Paper # | CPM2000-119 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2000/10/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MBE growth of Si_<0.75>Ge_<0.25> Alloys Using Short-period(Si_m/Ge_n)_N Superlattices on Si(001) Substrate |
| Sub Title (in English) | |
| Keyword(1) | (Si_m/Ge_n)_N superlattice |
| Keyword(2) | Residual strain |
| Keyword(3) | surface roughness |
| Keyword(4) | Atomic force microscopy |
| Keyword(5) | MBE |
| 1st Author's Name | M.M. Rahman |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University() |
| 2nd Author's Name | H. Matada |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University |
| 3rd Author's Name | T. Tambo |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University |
| 4th Author's Name | C. Tatsuyama |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University |
| Date | 2000/10/19 |
| Paper # | CPM2000-119 |
| Volume (vol) | vol.100 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |