Presentation 2000/10/19
Growth and electric properties of selective B dope Si/Ge periodic structure prepared by ion beam sputtering
Masafumi Kaimori, Yukihiro Takahashi, Yasunori Nabetani, Kimihiro Sasaki, Tomonobu Hata,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We tried to prepare heavily and selective B doped Si/Ge periodic structures on Si substrates by ion-beam sputtering. We observed that epitaxial growth of B doped Si/Ge periodic structures started at around 450℃ by the RHEED observation in spite that B was doped as heavily as 2.5×10^<21>cm^<-3> and that a periodic structure remained up to 500℃ by XRD analysis. For a B doped SiGe film a Hall mobility of 400cm^2/Vs was obtained at a hole concentration of 4×10^<17>cm^<-3> by Hall effect measurement.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ion-beam sputtering / Lattice match / Heavily B-doping / Si/Ge periodic structure
Paper # CPM2000-118
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Committee CPM
Conference Date 2000/10/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth and electric properties of selective B dope Si/Ge periodic structure prepared by ion beam sputtering
Sub Title (in English)
Keyword(1) Ion-beam sputtering
Keyword(2) Lattice match
Keyword(3) Heavily B-doping
Keyword(4) Si/Ge periodic structure
1st Author's Name Masafumi Kaimori
1st Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University()
2nd Author's Name Yukihiro Takahashi
2nd Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
3rd Author's Name Yasunori Nabetani
3rd Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
4th Author's Name Kimihiro Sasaki
4th Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
5th Author's Name Tomonobu Hata
5th Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
Date 2000/10/19
Paper # CPM2000-118
Volume (vol) vol.100
Number (no) 395
Page pp.pp.-
#Pages 8
Date of Issue